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STPSC4H065D

P1-P3P4-P6P7-P9P10-P12
This is information on a product in full production.
July 2015 DocID023598 Rev 5 1/12
STPSC4H065
650 V power Schottky silicon carbide diode
Datasheet - production data
Features
• No reverse recovery charge in application
current range
• Switching behavior independent of
temperature
• High forward surge capability
• Insulated package TO-220AC Ins:
– Insulated voltage: 2500 V rms
– Typical package capacitance: 7 pF
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
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Table 1. Device summary
Symbol Value
I
F(AV)
4 A
V
RRM
650 V
T
j
(max) 175 °C
www.st.com
Characteristics STPSC4H065
2/12 DocID023598 Rev 5
1 Characteristics
To evaluate the conduction losses use the following equation: P = 1.35 x I
F(AV)
+ 0.288 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 650
V
I
F(RMS)
Forward rms current 22 A
I
F(AV)
Average forward current
TO-220AC, DPAK, T
c
= 145 °C
(1)
, DC
4
A
TO-220AC Ins, T
c
= 125 °C
(1)
, DC
I
FSM
Surge non repetitive forward
current
t
p
= 10 ms sinusoidal, T
c
= 25 °C
t
p
= 10 ms sinusoidal, T
c
= 125 °C
t
p
= 10 µs square, T
c
= 25 °C
38
35
200
A
I
FRM
Repetitive peak forward
current
TO-220AC, DPAK, T
c
= 145 °C
(1)
, T
j
= 175 °C, δ = 0.1
17
A
TO-220AC Ins, T
c
= 125 °C
(1)
, T
j
= 175 °C, δ = 0.1
T
stg
Storage temperature range -55 to +175 °C
T
j
Operating junction temperature
(2)
-40 to +175 °C
1. Value based on R
th(j-c)
max.
2. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
------- --------
1
Rth j a–()
----------- ---------------
<
Table 3. Thermal resistance
Symbol Parameter Typ. value Max. value Unit
R
th(j-c)
Junction to case
TO-220AC, DPAK 1.8 2.7
°C/W
TO-220AC Ins 3 4.5
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-340
µA
T
j
= 150 °C - 35 170
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 4 A
- 1.56 1.75
V
T
j
= 150 °C - 1.98 2.5
1. t
p
= 10 ms, δ < 2%
2. t
p
= 500 µs, δ < 2%
DocID023598 Rev 5 3/12
STPSC4H065 Characteristics
12
Table 5. Dynamic electrical characteristics
Symbol Parameter Test conditions Min. Typ. Unit
Q
cj
(1)
Total capacitive charge V
R
= 400 V 12.5 nC
C
j
Total capacitance
V
R
= 0 V, T
c
= 25 °C, F = 1 MHz 200
pF
V
R
= 400 V, T
c
= 25 °C, F = 1 MHz 21
1. Most accurate value for the capacitive charge:
Q = c
j
(v
R
).dv
R
cj
∫
V
OUT
0
Figure 1. Forward voltage drop versus forward
current (typical values, low level)
Figure 2. Forward voltage drop versus forward
current (typical values, high level)
A)
I
F
(
0
1
2
3
4
5
6
7
8
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
T
a
=150 °C
T
a
=175 °C
T
a
=25 °C
Pulse test : t
p
=500µs
T
a
=100 °C
V
F
(V)
0
4
8
12
16
20
24
28
32
36
40
0123 45678
T
a
=150 °C
T
a
=175 °C
T
a
=25 °C
Pulse test : t
p
=500µs
T
a
=100 °C
I
F
(A)
V
F
(V)
Figure 3. Reverse leakage current versus
reverse voltage applied (typical values)
Figure 4. Peak forward current versus case
temperature (TO-220AC and DPAK)
I
R
(µA)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
0 50 100 150 200 250 300 350 400 450 500 550 600 650
T
j
=25 °C
T
j
=150 °C
T
j
=175 °C
V
R
(V)
I
M
(A)
0
10
20
30
40
50
0 25 50 75 100 125 150 175
d = 0.1
d = 0.3
d = 0.5
d = 1
d = 0.7
T
C
(°C)
T
d
=tp/T
tp
I
M
P1-P3P4-P6P7-P9P10-P12

STPSC4H065D

Mfr. #:
Buy STPSC4H065D
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 650V pwr Schottky 4A 650V VRRM
Lifecycle:
New from this manufacturer.
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