FDV302P Datasheet FDV302P, FDV302P_D87Z | P1-P3

October 1997

FDV302P

Digital FET, P-Channel

General Description Features

Absolute Maximum Ratings T

A

= 25

o

C unless otherwise noted

Symbol Parameter FDV302P Units

V

DSS

Drain-Source Voltage -25 V

V

GSS

Gate-Source Voltage -8 V

I

D

Drain Current - Continuous -0.12 A

- Pulsed -0.5

P

D

Maximum Power Dissipation 0.35 W

T

J

,T

STG

Operating and Storage Temperature Range -55 to 150 °C

ESD Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm)

6.0 kV

THERMAL CHARACTERISTICS

R

θ

JA

Thermal Resistance, Junction-to-Ambient 357 °C/W

FDV302P REV. F

-25 V, -0.12 A continuous, -0.5 A Peak.

R

DS(ON)

= 13 Ω @ V

GS

= -2.7 V

R

DS(ON)

= 10 Ω @ V

GS

= -4.5 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. V

GS(th)

< 1.5V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Compact industry standard SOT-23 surface mount

package.

Replace many PNP digital transistors (DTCx and DCDx)

with one DMOS FET.

This P-Channel logic level enhancement mode field effect

transistor is produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance. This

device has been designed especially for low voltage

applications as a replacement for digital transistors. Since

bias resistors are not required, this one P-channel FET can

replace several digital transistors with different bias resistors

such as the DTCx and DCDx series.

Mark:302

S

D

G

SOT-23

SuperSOT

TM

-8

SOIC-16

SO-8

SOT-223

SuperSOT

TM

-6

Electrical Characteristics (T

A

= 25

O

C unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BV

DSS

Drain-Source Breakdown Voltage V

GS

= 0 V, I

D

= -250 µA -25 V

∆BV

DSS

/∆T

J

Breakdown Voltage Temp. Coefficient

I

D

= -250 µA, Referenced to 25

o

C

-20

mV /

o

C

I

DSS

Zero Gate Voltage Drain Current

V

DS

= -20 V, V

GS

= 0 V

-1 µA

T

J

= 55°C

-10 µA

I

GSS

Gate - Body Leakage Current V

GS

= -8 V, V

DS

= 0 V -100 nA

ON CHARACTERISTICS (Note)

∆V

GS(th)

/∆T

J

Gate Threshold Voltage Temp. Coefficient

I

D

= -250 µA, Referenced to 25

o

C

1.9

mV /

o

C

V

GS(th)

Gate Threshold Voltage

V

DS

= V

GS

, I

D

= -250 µA

-0.65 -1 -1.5 V

R

DS(ON)

Static Drain-Source On-Resistance V

GS

= -2.7 V, I

D

= -0.05 A 10.6 13

Ω

V

GS

= -4.5 V, I

D

= -0.2 A

7.9 10

T

J

=125°C 12 18

I

D(ON)

On-State Drain Current

V

GS

= -2.7 V, V

DS

= -5 V

-0.05 A

g

FS

Forward Transconductance V

DS

= -5 V, I

D

= -0.2 A 0.135 S

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance

V

DS

= -10 V, V

GS

= 0 V,

f = 1.0 MHz

11 pF

C

oss

Output Capacitance 7 pF

C

rss

Reverse Transfer Capacitance 1.4 pF

SWITCHING CHARACTERISTICS (Note)

t

D(on)

Turn - On Delay Time V

DD

= -6 V, I

D

= -0.2 A,

V

GS

= -4.5 V, R

GEN

= 50 Ω

5 12 ns

t

r

Turn - On Rise Time 8 16 ns

t

D(off)

Turn - Off Delay Time 9 18 ns

t

f

Turn - Off Fall Time 5 10 ns

Q

g

Total Gate Charge V

DS

= -5 V, I

D

= -0.2 A,

V

GS

= -4.5 V

0.22 0.31 nC

Q

gs

Gate-Source Charge 0.11 nC

Q

gd

Gate-Drain Charge 0.04 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

I

S

Maximum Continuous Drain-Source Diode Forward Current -0.2 A

V

SD

Drain-Source Diode Forward Voltage

V

GS

= 0 V, I

S

= -0.2 A

(Note)

-1 -1.5 V

Note:

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDV302P REV. F

0 1 2 3 4

0

0.05

0.1

0.15

0.2

-V , DRAIN-SOURCE VOLTAGE (V)

-I , DRAIN-SOURCE CURRENT (A)

V = -5.0V

GS

DS

D

-4.5

-2.7

-2.5

-2.0

-3.0

-3.5

-4.0

0 0.05 0.1 0.15 0.2

0.5

1

1.5

2

-I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

R , NORMALIZED

V = -2.0 V

GS

D

DS(ON)

-3.5

-4.5

-2.7

-2.5

-3.0

-4.0

Typical Electrical Characteristics

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

Figure 3. On-Resistance Variation

with Temperature.

0.5 1 1.5 2 2.5 3

0

0.02

0.04

0.06

0.08

-V , GATE TO SOURCE VOLTAGE (V)

-I , DRAIN CURRENT (A)

V = -5V

DS

GS

D

T = -55°C

A

125°C

25°C

Figure 5. Transfer Characteristics.

0.2 0.4 0.6 0.8 1 1.2

0.0001

0.001

0.01

0.1

0.5

-V , BODY DIODE FORWARD VOLTAGE (V)

-I , REVERSE DRAIN CURRENT (A)

T = 125°C

J

25°C

-55°C

V = 0V

GS

SD

S

Figure 6. Body Diode Forward Voltage

Variation with Source Current and

Temperature.

Figure 4. On Resistance Variation with

Gate-To- Source Voltage.

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

R , NORMALIZED

DS(ON)

V = -2.7V

GS

I = -0.05A

D

0 1 2 3 4 5 6 7 8

0

5

10

15

20

25

-V ,GATE TO SOURCE VOLTAGE (V)

R ,ON-RESISTANCE (OHM)

GS

DS(ON)

I = -0.05A

D

T = 25°C

A

125 °C

FDV302P

FDV302P

Products related to this Datasheet