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NRVBA320T3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
April, 2017 − Rev. 2
1 Publication Order Number:
MBRA320/D
MBRA320, NRVBA320
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
Employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
Features
• Small Compact Surface Mountable Package with J−Bent Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Guardring for Stress Protection
• NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped in 12 mm tape, 5000 units per 13 inch reel
• Polarity: Cathode Lead Indicated by Polarity Band
• ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
• Device Meets MSL 1 Requirements
Device Package Shipping
†
ORDERING INFORMATION
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES
20 VOLTS
MARKING DIAGRAM
SMA
CASE 403D
A32
AYWWG
www.onsemi.com
MBRA320T3G SMA
(Pb−Free)
5000 / Tape &
Reel
Cathode Anode
A32 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
12
1
2
NRVBA320T3G* SMA
(Pb−Free)
5000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
(Note: Microdot may be in either location)
MBRA320, NRVBA320
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 V
Average Rectified Forward Current
(At Rated V
R
, T
L
= 100°C)
I
O
3.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
80 A
Storage Temperature T
stg
−65 to +150 °C
Operating Junction Temperature T
J
−65 to +125 °C
Voltage Rate of Change
(Rated V
R
, T
J
= 25°C)
dv/dt 10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol Value Unit
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 1)
R
θ
JL
R
θ
JA
15
80
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 2) (I
F
= 3.0 A, T
J
= 25°C)
V
F
0.50 Volts
Maximum Instantaneous Reverse Current (Note 2)
(V
R
= 20 V)
I
R
T
J
= 25°C T
J
= 100°C
mA
2.0 20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
10
0.1
0.20.0 0.4 0.6
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage
1
0.8
I
F
, FORWARD CURRENT (AMPS)
T
J
= 25°C
T
J
= 125°C
T
J
= 100°C
T
J
= −65°C
V
F
, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)
I
F
, FORWARD CURRENT (AMPS)
1.00.30.1 0.5 0.7 0.9
10
0.1
0.20.0 0.4 0.6
1
0.8
T
J
= 25°C
T
J
= 125°C
T
J
= 100°C
T
J
= −65°C
0.30.1 0.5 0.7 0.9
1.0
MBRA320, NRVBA320
www.onsemi.com
3
TYPICAL CHARACTERISTICS
02010
V
R
, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
I
R
, REVERSE CURRENT (AMPS)
T
J
= 25°C
T
J
= 100°C
1.E−06
1.E−04
1.E−03
1.E−02
1.E−01
02010
V
R
, REVERSE VOLTAGE (V)
I
R
, MAXIMUM REVERSE CURRENT (AMPS)
T
J
= 25°C
T
J
= 100°C
1.E−06
1.E−04
1.E−03
1.E−02
1.E−01
0
13050 60 70 80
T
L
, LEAD TEMPERATURE (°C)
Figure 5. Current Derating Figure 6. Forward Power Dissipation
100 110
I
O
, AVERAGE FORWARD CURRENT (AMPS)
0
40123
I
O
, AVERAGE FORWARD CURRENT (A)
5
5
P
FO
, AVERAGE POWER DISSIPATION (W)
1
2
3
4
5
SQUARE WAVE
dc
1
2
6
6
R
q
JL
= 15°C/W
SQUARE
WAVE
dc
1.E−05
515 515
3
4
1.E−05
Figure 7. Typical Capacitance
700
0
360162024
V
R
, REVERSE VOLTAGE (V)
100
28 32 40
C, CAPACITANCE (pF)
T
J
= 25°C
200
300
400
500
600
4812
90 120
P1-P3P4-P5

NRVBA320T3G

Mfr. #:
Buy NRVBA320T3G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 3A 20V SCHOTTKY
Lifecycle:
New from this manufacturer.
Delivery:
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