IPD30N08S2L21ATMA1

IPD30N08S2L-21
13 Typical avalanche energy 14 Typ. gate charge
E
AS
= f(T
j
) V
GS
= f(Q
gate
); I
D
= 30 A pulsed
parameter: I
D
15 Typ. drain-source breakdown voltage 16 Gate charge waveforms
V
BR(DSS)
= f(T
j
); I
D
= 1 mA
30 A
15 A
7.5 A
0
200
400
600
800
1000
25 75 125 175
T
j
[°C]
E
AS
[mJ]
V
GS
Q
gate
Q
gs
Q
gd
Q
g
V
GS
Q
gate
Q
gs
Q
gd
Q
g
15 V
60 V
0
2
4
6
8
10
12
0 102030405060
Q
gate
[nC]
V
GS
[V]
65
70
75
80
85
90
-60 -20 20 60 100 140 180
T
j
[°C]
V
BR(DSS)
[V]
Rev. 1.0 page 7 2006-07-18
IPD30N08S2L-21
Published by
Infineon Technologies AG
Am Campeon 1-12
D-85579 Neubiberg
©
Infineon Technologies AG 1999
All Rights Reserved.
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regarding circuits, descriptions and charts stated herein.
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For information on the types in question, please contact your nearest Infineon Technologies Office.
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Rev. 1.0 page 8 2006-07-18

IPD30N08S2L21ATMA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 75V 30A DPAK-2 OptiMOS
Lifecycle:
New from this manufacturer.
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