NCP2817
www.onsemi.com
3
MAXIMUM RATINGS
Rating Symbol Value Unit
V
P
Pin: Power Supply Voltage (Note 1) V
P
−0.3 to + 6.0 V
/SD Pin: Input V
mr1
−0.3 to V
P
+ 0.3 V
Human Body Model (HBM) ESD Rating are (Notes 2 and 3) ESD HBM 2000 V
Machine Model (MM) ESD Rating are (Note 2 and 3) ESD MM 200 V
CSP 1.62 x 1.22, 0.4P package (Note 6 and 7)
Thermal Resistance Junction to Case
R
q
JC
(Note 7)
°C/W
Operating Ambient Temperature Range T
A
−40 to + 85 °C
Operating Junction Temperature Range T
J
−40 to + 125 °C
Maximum Junction Temperature (Note 6) T
JMAX
+ 150 °C
Storage Temperature Range T
STG
−65 to + 150 °C
Moisture Sensitivity (Note 5) MSL Level 1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Maximum electrical ratings are defined as those values beyond which damage to the device may occur at T
A
= 25°C.
2. According to JEDEC standard JESD22−A108B.
3. This device series contains ESD protection and passes the following tests:
Human Body Model (HBM) ±2.0 kV per JEDEC standard: JESD22−A114 for all pins.
Machine Model (MM) ±200 V per JEDEC standard: JESD22−A115 for all pins.
4. Latch up Current Maximum Rating: ±100 mA per JEDEC standard: JESD78 class II.
5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A.
6. The thermal shutdown set to 150 °C (typical) avoids irreversible damage on the device due to power dissipation.
7. The R
q
CA
is dependent on the PCB heat dissipation. The maximum power dissipation (P
D
) is dependent on the min input voltage, the max
output current and external components selected.
R
qCA
+
125 * T
A
P
D
* R
qJC
ELECTRICAL CHARACTERISTICS Min & Max Limits apply for T
A
between −40°C to +85°C and T
J
up to + 125°C for V
P
= 3.6 V
(Unless otherwise noted). Typical values are referenced to T
A
= + 25°C and V
P
= 3.6 V.
Symbol
Parameter Conditions Min Typ Max Unit
V
BATTERY
Supply voltage range 1.6 5.5 V
I
SD
Shutdown current 1
mA
I
Q
Quiescent current V
P
= 1.8 V 2.3 3.0 mA
R
IN
Input resistance 7.5 10 12.5
kW
R
SD
/SD pull−down resistor 300
kW
Maximum input signal swing 2.8 V
PP
V
IH
High−level input voltage SD pin 1.2 V
V
IL
Low−level input voltage SD pin 0.4 V
UVLO UVLO threshold Falling edge 1.4 V
UVLO
HYS
UVLO hysteresis 100 mV
T
SD
Thermal shutdown temperature 160 °C
V
OS
Output offset voltage Input AC grounded ± 0.5 mV
T
WU
Turning On time 1 ms
V
LP
Max Output Swing (peak value)
V
P
= 1.8 V, Headset = 32 W
1.13 V
peak
P
O
Max Output Power (Note 8) V
P
= 1.8 V, THD+N = 1%
Headset = 16 W
Headset = 32 W
20
41
27
mW
8. Guaranteed by design and characterized.
9. Typical application circuit as depicted
