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SSM3K17FU,LF

P1-P3P4-P5
SSM3K17FU
2014-03-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K17FU
High Speed Switching Applications
Analog Switch Applications
• Suitable for high-density mounting due to compact package
• High drain-source voltage
• High speed switching
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-Source voltage
V
DS
50 V
Gate-Source voltage
V
GSS
±7 V
DC
I
D
100
Drain current
Pulse
I
DP
200
mA
Drain power dissipation (Ta = 25°C)
P
D
(Note 1) 150 mW
Channel temperature
T
ch
150 °C
Storage temperature range
T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm
2
× 3)
Marking Equivalent Circuit
This transistor is a electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC ―
JEITA SC-70
TOSHIBA 2-2E1E
Weight: 6 mg (typ.)
0.6 mm
1.0 mm
D M
1 2
3
12
3
Start of commercial production
2001-09
SSM3K17FU
2014-03-01
2
Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= ±7 V, V
DS
= 0 ― ― ±5 μA
Drain-Source breakdown voltage V
(BR) DSS
I
D
= 0.1 mA, V
GS
= 0 50 ― ― V
Drain cut-off current I
DSS
V
DS
= 50 V, V
GS
= 0 ― ― 1 μA
Gate threshold voltage V
th
V
DS
= 3 V, I
D
= 1 μA 0.9 ― 1.5 V
Forward transfer admittance ⏐Y
fs
⏐ V
DS
= 3 V, I
D
= 10 mA 20 40 ― mS
I
D
= 10 mA, V
GS
= 4 V ― 12 20
Drain-Source ON resistance R
DS (ON)
I
D
= 10 mA, V
GS
= 2.5 V ― 22 40
Ω
Input capacitance C
iss
V
DS
= 3 V, V
GS
= 0, f = 1 MHz ― 7 ― pF
Reverse transfer capacitance C
rss
V
DS
= 3 V, V
GS
= 0, f = 1 MHz ― 3 ― pF
Output capacitance C
oss
V
DS
= 3 V, V
GS
= 0, f = 1 MHz ― 7 ― pF
Turn-on time t
on
― 100 ―
Switching time
Turn-off time t
off
V
DD
= 3 V, I
D
= 20 mA, V
GS
= 0 to 3 V,
R
G
= 10 Ω, R
L
= 150 Ω
― 40 ―
ns
Switching Time Test Circuit
(a) Test circuit (b) V
IN
(c) V
OUT
t
on
90%
10%
0 V
3 V
10%
90%
t
off
t
r
t
f
V
DD
V
DS
(
ON
)
V
DD
= 3 V
Duty≤1%
V
IN
: t
r
, t
f
< 5 ns
(Z
out
= 50 Ω)
Common source
Ta = 25°C
V
DD
OUT
IN
3 V
0
1 μs
50 Ω
R
L
10 Ω
SSM3K17FU
2014-03-01
3
I
D
– V
DS
I
D
– V
GS
R
DS (ON)
– I
D
R
DS (ON)
– Ta
R
DS (ON)
– V
GS
⎪Y
fs
⎪ – I
D
Drain-Source voltage V
DS
(V) Gate-Source voltage V
GS
(V)
Drain current I
D
(mA)
Ambient temperature Ta (°C)
Gate-Source voltage V
GS
(V) Drain current I
D
(mA)
Drain current I
D
(mA)
Drain current I
D
(mA)
Drain-Source on resistance
R
DS (ON)
(Ω)
Drain-Source on resistance
R
DS (ON)
(Ω)
Forward transfer admittance
⎪Y
fs
⎪ (mS)
Drain-Source on resistance
R
DS (ON)
(Ω)
0
0
40
100
0.4
20
60
80
V
GS
= 2.5 V
Common source
Ta = 25°C
4
0.8 1.2 1.6 2
4.5
5
0231
0.001
0.1
1000
0.01
10
100
Ta = 150°C
Common source
V
DS
= 3 V
−25°C
1
4 5 6 7
75°C
25°C
1
0.5 1 3 10 5 30 50 100
3
5
10
30
50
100
Common source
Ta = 25°C
V
GS
= 2.5 V
4 V
30
20
0
−50 0 50 100 150
10
40
Common source
I
D
= 10 mA
V
GS
= 2.5 V
4 V
0
0 2 4 6 8 10
10
20
30
40
I
D
= 10 mA
Common source
Ta = 25°C
100 mA
1 10 100 3
10
30
50
100
300
500
Common source
V
DS
= 3 V
Ta = 25°C
5 30 50
P1-P3P4-P5

SSM3K17FU,LF

Mfr. #:
Buy SSM3K17FU,LF
Manufacturer:
Toshiba
Description:
MOSFET LowON Res MOSFET ID=0.1A VDSS=50V
Lifecycle:
New from this manufacturer.
Delivery:
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