Characteristics STPS20M100S
2/11 Doc ID 15521 Rev 2
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.425 x I
F(AV)
+ 0.0088 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100 V
I
F(RMS)
Forward current rms 30 A
I
F(AV)
Average forward current δ = 0.5
TO-220AB, D
2
PAK, I
2
PAK, T
c
= 130 °C
20 A
TO-220FPAB, T
c
= 85 °C
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal,
terminals 1 and 3 short circuited
530 A
P
ARM
(1)
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 16000 W
V
ARM
(2)
Maximum repetitive peak avalanche
voltage
t
p
< 1 µs T
j
< 150 °C
I
AR
< 40 A
120 V
V
ASM
(2)
Maximum single pulse peak
avalanche voltage
t
p
< 1 µs T
j
< 150 °C
I
AR
< 40 A
120 V
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(3)
150 °C
1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 14
3. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j a–()
--------------------------
<
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220AB, D
2
PAK, I
2
PA K 1 . 2
°C/W
TO-220FPAB 4
Table 4. Static electrical characteristics (terminals 1 and 3 short circuited)
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= 70 V
5µA
T
j
= 125 °C 5 mA
T
j
= 25 °C
V
R
= 100 V
10 40 µA
T
j
= 125 °C 10 40 mA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 5 A
550
mV
T
j
= 125 °C 455
T
j
= 25 °C
I
F
= 10A
660 730
T
j
= 125 °C 530 600
T
j
= 25 °C
I
F
= 20 A
775 850
T
j
= 125 °C 610 690
1. Pulse test: t
p
= 5 ms, δ < 2%
2. Pulse test: t
p
= 380 µs, δ < 2%
