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IRF6607TR1
P1-P3
P4-P6
P7-P9
P10-P11
IRF6607
www.irf.com
7
Fig 15.
Peak
Diode Recovery
dv/dt Test
Circuit
for N-Channel
HEXFET
®
Power MOSFETs
Circuit
Layout
Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T
. I
SD
Waveform
D.U.T
. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
*
V
GS
=
5V for
Logic Level
Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
•
dv/dt controlled
by R
G
•
Driver same type as
D.U.T.
•
I
SD
controlled
by Duty
Factor "D"
•
D.U.T. - Device Under
Test
D.U.T
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 16.
Gate Charge Waveform
IRF6607
8
www.irf.com
DirectFET
Outline Dimension, MT Outline
(Medium Size Can, T
-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
MAX
0.250
0.199
0.156
0.018
0.032
0.036
0.072
0.040
0.026
0.039
0.104
0.028
0.003
0.007
MIN
6.25
4.80
3.85
0.35
0.78
0.88
1.78
0.98
0.63
0.88
2.46
0.59
0.03
0.08
MAX
6.35
5.05
3.95
0.45
0.82
0.92
1.82
1.02
0.67
1.01
2.63
0.70
0.08
0.17
MIN
0.246
0.189
0.152
0.014
0.031
0.035
0.070
0.039
0.025
0.035
0.097
0.023
0.001
0.003
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
DIMENSIONS
METRIC
IMPERIAL
IRF6607
www.irf.com
9
DirectFET
Substrate and PCB Layout, MT Outline
(MediumSize Can,
T
-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
G
D
DD
D
S
S
DirectFET
Part Marking
6607
P1-P3
P4-P6
P7-P9
P10-P11
IRF6607TR1
Mfr. #:
Buy IRF6607TR1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 27A DIRECTFET
Lifecycle:
New from this manufacturer.
Delivery:
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Products related to this Datasheet
IRF6607
IRF6607TR1