IRF6607
www.irf.com 7
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr
Fig 16. Gate Charge Waveform
IRF6607
8 www.irf.com
DirectFET Outline Dimension, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
MAX
0.250
0.199
0.156
0.018
0.032
0.036
0.072
0.040
0.026
0.039
0.104
0.028
0.003
0.007
MIN
6.25
4.80
3.85
0.35
0.78
0.88
1.78
0.98
0.63
0.88
2.46
0.59
0.03
0.08
MAX
6.35
5.05
3.95
0.45
0.82
0.92
1.82
1.02
0.67
1.01
2.63
0.70
0.08
0.17
MIN
0.246
0.189
0.152
0.014
0.031
0.035
0.070
0.039
0.025
0.035
0.097
0.023
0.001
0.003
CODE
A
B
C
D
E
F
G
H
J
K
L
M
N
P
DIMENSIONS
METRIC
IMPERIAL
IRF6607
www.irf.com 9
DirectFET Substrate and PCB Layout, MT Outline
(MediumSize Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
G
D
DD
D
S
S
DirectFET Part Marking
6607

IRF6607TR1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 30V 27A DIRECTFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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