MC100ELT24MNR4G

© Semiconductor Components Industries, LLC, 2015
August, 2015 − Rev. 11
1 Publication Order Number:
MC10ELT24/D
MC10ELT24, MC100ELT24
5V TTL to Differential
ECL Translator
Description
The MC10ELT/100ELT24 is a TTL to differential ECL translator.
Because ECL levels are used a +5 V, −5.2 V (or −4.5 V) and ground
are required. The small outline 8−lead package and the single gate of
the ELT24 makes it ideal for those applications where space,
performance and low power are at a premium.
The 100 Series contains temperature compensation.
Features
0.8 ns t
PHL
, 0.95 ns t
PLH
Typical Propagation Delay
PNP TTL Inputs for Minimal Loading
Flow Through Pinouts
Operating Range: V
CC
= 4.5 V to 5.5 V; V
EE
= −4.2 V to −5.5 V with
GND = 0 V
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
H = MC10
K = MC100
5E = MC10
2T = MC100
M = Date Code
SOIC−8
D SUFFIX
CASE 751
MARKING DIAGRAMS*
TSSOP−8
DT SUFFIX
CASE 948R
ALYWG
G
HT24
ALYWG
G
KT24
1
8
1
8
1
8
www.onsemi.com
*For additional marking information, refer to
Application Note AND8002/D.
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
1
8
HLT24
ALYW
G
1
8
KLT24
ALYW
G
1
8
DFN8
MN SUFFIX
CASE 506AA
5E MG
G
14
2T MG
G
14
(Note: Microdot may be in either location)
MC10ELT24, MC100ELT24
www.onsemi.com
2
1
2
3
45
6
7
8
Q
GND
V
CC
Figure 1. 8−Lead Pinout (Top View) and Logic
Diagram
D
Q
NC
NC
V
EE
TTL
ECL
Table 1. PIN DESCRIPTION
Pin Function
Q, Q ECL Differential Outputs*
D TTL Input
V
CC
Positive Supply
V
EE
Negative Supply
GND Ground
NC No Connect
EP (DFN8 only) Thermal exposed pad must be con-
nected to a sufficient thermal conduit. Electrically
connect to the most negative supply (GND) or
leave unconnected, floating open.
*Output state undetermined when inputs are open.
Table 2. ATTRIBUTES
Characteristics Value
Internal Input Pulldown Resistor N/A
Internal Input Pullup Resistor N/A
ESD Protection Human Body Model
Machine Model
> 4 kV
> 200 V
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) Pb−Free Pkg
SOIC−8
TSSOP−8
DFN8
Level 1
Level 3
Level 1
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
Transistor Count 51 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
MC10ELT24, MC100ELT24
www.onsemi.com
3
Table 3. MAXIMUM RATINGS
Symbol Parameter Condition 1 Condition 2 Rating Unit
V
CC
Positive Power Supply GND = 0 V V
EE
= −5.0 V 7 V
V
EE
Negative Power Supply GND = 0 V V
CC
= +5.0 V −8 V
V
IN
Input Voltage GND = 0 V V
I
v V
CC
0 to V
CC
V
I
out
Output Current Continuous
Surge
50
100
mA
mA
T
A
Operating Temperature Range −40 to +85 °C
T
stg
Storage Temperature Range −65 to +150 °C
q
JA
Thermal Resistance (Junction−to−Ambient) 0 lfpm
500 lfpm
SO−8
SO−8
190
130
°C/W
°C/W
q
JC
Thermal Resistance (Junction−to−Case) Standard Board SO−8 41 to 44 °C/W
q
JA
Thermal Resistance (Junction−to−Ambient) 0 lfpm
500 lfpm
TSSOP−8
TSSOP−8
185
140
°C/W
°C/W
q
JC
Thermal Resistance (Junction−to−Case) Standard Board TSSOP−8 41 to 44 $5% °C/W
q
JA
Thermal Resistance (Junction−to−Ambient) 0 lfpm
500 lfpm
DFN8
DFN8
129
84
°C/W
°C/W
T
sol
Wave Solder Pb−Free <2 to 3 sec @ 260°C 265 °C
q
JC
Thermal Resistance (Junction−to−Case) (Note 2) DFN8 35 to 40 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power)
Table 4. 10ELT SERIES NECL OUTPUT DC CHARACTERISTICS V
CC
= 5.0 V; V
EE
= −5.0 V; GND = 0 V (Note 3)
Symbol
Characteristic
−40°C 25°C 85°C
Unit
Min Typ Max Min Typ Max Min Typ Max
I
CC
V
CC
Power Supply Current 7.0 4.5 7.0 7.0 mA
I
EE
Power Supply Current 18 12.5 18 18 mA
V
OH
Output HIGH Voltage (Note 4) −1080 −990 890 −980 895 −810 910 −815 720 mV
V
OL
Output LOW Voltage (Note 4) 1950 −1800 −1650 −1950 −1790 −1630 −1950 −1773 −1595 mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
3. Output parameters vary 1:1 with GND. V
CC
can vary 4.5 V / 5.5 V. V
EE
can vary −4.2 V / −5.5 V.
4. Outputs are terminated through a 50 W resistor to GND − 2 V.
Table 5. 100ELT SERIES NECL OUTPUT DC CHARACTERISTICS V
CC
= 5.0 V; V
EE
= −5.0 V; GND = 0 V (Note 5)
Symbol
Characteristic
−40°C 25°C 85°C
Unit
Min Typ Max Min Typ Max Min Typ Max
I
CC
V
CC
Power Supply Current 7.0 4.5 7.0 7.0 mA
I
EE
Power Supply Current 18 12.5 18 18 mA
V
OH
Output HIGH Voltage (Note 6) −1085 −1005 −880 1025 −955 −880 1025 −955 880 mV
V
OL
Output LOW Voltage (Note 6) 1830 −1695 −1555 −1810 −1705 −1620 −1810 −1705 −1620 mV
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm.
5. Output parameters vary 1:1 with GND. V
CC
can vary 4.5 V / 5.5 V. V
EE
can vary −4.2 V / −5.5 V.
6. Outputs are terminated through a 50 W resistor to GND − 2 V.

MC100ELT24MNR4G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Translation - Voltage Levels 5 V TTL TO DIFF ECL TRANS
Lifecycle:
New from this manufacturer.
Delivery:
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