© 2004 IXYS All rights reserved
1 - 2
VMM 650-01F
407
IXYS reserves the right to change limits, test conditions and dimensions.
Phaseleg Configuration
Dual Power
HiPerFET
TM
Module
V
DSS
= 100 V
I
D25
= 680 A
R
DS(on)
= 1.8 m
ΩΩ
ΩΩ
Ω
MOSFET T1 + T2
Symbol Conditions Maximum Ratings
V
DSS
T
VJ
= 25°C to 150°C 100 V
V
GS
±20 V
I
D25
T
C
= 25°C ① 680 A
I
D80
T
C
= 80°C ① 500 A
I
F25
(diode) T
C
= 25°C ① 680 A
I
F80
(diode) T
C
= 80°C ① 500 A
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
R
DSon
V
GS
= 10 V;
I
D
= I
D80
1.8 2.2 mΩ
V
GSth
V
DS
= 20 V;
I
D
= 30 mA 2 4 V
I
DSS
V
DS
= 0.8 • V
DSS
;
V
GS
= 0 V; T
VJ
= 25°C 1 mA
T
VJ
= 125°C 1.5 mA
I
GSS
V
GS
= ±20 V; V
DS
= 0 V 1 µA
Q
g
1440 nC
Q
gs
200 nC
Q
gd
680 nC
t
d(on)
150 ns
t
r
250 ns
t
d(off)
400 ns
t
f
200 ns
V
F
(diode) I
F
= 650 A;
V
GS
= 0 V 1.2 1.5 V
t
rr
(diode) I
F
= 650 A;
-di/dt = 500 A/µs; V
DS
= ½ V
DSS
300 ns
R
thJC
0.08 K/W
R
thJS
with heat transfer paste 0.12 K/W
①
additional current limitation by external leads
Features
• HiPerFET
TM
technology
– low R
DSon
– unclamped inductive switching (UIS)
capability
– dv/dt ruggedness
– fast intrinsic reverse diode
– low gate charge
• thermistor
for internal temperature measurement
• package
– low inductive current path
– screw connection to high current
main terminals
– use of non interchangeable
connectors for auxiliary terminals
possible
– Kelvin source terminals for easy drive
– isolated DCB ceramic base plate
Applications
• converters with high power density for
– main and auxiliary AC drives of
electric vehicles
– 4 quadrant DC drives
– power supplies
V
GS
= 10 V; V
DS
= 75 V; I
D
= I
D80
V
GS
= 10 V; V
DS
= 0.5 • V
DSS
;
I
D
= I
D80
; R
G
= 0.47 Ω
Preliminary Data
3
1
2
8
9
11
10
6
7
NTC
