FDMS8662 N-Channel PowerTrench
®
MOSFET
www.fairchildsemi.com
4
©2009 Fairchild Semiconductor Corporation
FDMS8662 Rev.C
2
Figure 7.
0 1530456075
0
2
4
6
8
10
I
D
= 28A
V
DD
= 15V
V
DD
= 10V
V
GS
, GATE TO SOURCE VOLTAGE(V)
Q
g
, GATE CHARGE(nC)
V
DD
= 20V
Gate Charge Characteristics Figure 8.
0.1 1 10
100
1000
10000
30
f = 1MHz
V
GS
= 0V
CAPACITANCE (pF)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
C a p a c i t a n c e v s D r a i n
to Source Voltage
Figure 9.
0.01 0.1 1 10 100 1000
1
10
T
J
= 25
o
C
T
J
= 125
o
C
t
AV
, TIME IN AVALANCHE(ms)
I
AS
, AVALANCHE CURRENT(A)
40
U n c l a m p e d I n d u c t i v e
Switching Capability
Figure 10.
25 50 75 100 125 150
0
20
40
60
80
100
120
140
160
180
R
TJC
= 1.5
o
C/W
V
GS
= 10V
V
GS
= 4.5V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
Limited by Package
M a x i m u m C o n t i n u o u s D r a i n
Current vs Case Temperature
Fi gu re 11. Fo rw ard Bi as Saf e
Operating Area
0.01 0.1 1 10 100
0.01
0.1
1
10
100
DC
10s
1s
100ms
10ms
1ms
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
TJA
= 125
o
C/W
T
A
= 25
o
C
300
Figure 12.
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
1
10
100
1000
10000
SINGLE PULSE
R
TJA
= 125
o
C/W
T
A
= 25
o
C
0.5
V
GS
= 10V
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (s)
S i n g l e P u l s e M a x i m u m
Power Dissipation
Typical Characteristics T
J
= 25°C unless otherwise noted
