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ILD766-1

P1-P3P4-P6
ILD766
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 03-Aug-11
1
Document Number: 83643
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Photodarlington Output, AC Input, Internal R
BE
DESCRIPTION
The ILD766 are bidirectional input optically coupled
isolators. They consist of two gallium arsenide infrared
emitting diodes coupled to a silicon NPN photodarlington
per channel.
The ILD766 has two isolated channels in a single DIP
package.
FEATURES
• Internal R
BE
for better stability
•BV
CEO
> 60 V
• AC or polarity insensitive inputs
• Built-in reverse polarity input protection
• Industry standard DIP package
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Designed for applications requiring detection or
monitoring of AC signals
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• CSA 93751
• BSI IEC 60950; IEC 60065
Note
• Additional options may be possible, please contact sales office.
E
C
C
E
1
2
3
4
8
7
6
5
C/A
A/C
C/A
A/C
i179034_12
DIP
ORDERING INFORMATION
ILD766-#
PART NUMBER
CTR BIN
AGENCY CERTIFIED/PACKAGE
CTR (%)
2 mA 1 mA
UL, CSA, BSI t
t
500
t
500
DIP-8 ILD766-1 ILD766-2
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Forward current I
F
60 mA
Power dissipation P
diss
90 mW
Derate linearly from 25 °C 1.2 mW/°C
OUTPUT
Collector emitter breakdown voltage BV
CEO
60 V
Collector base breakdown voltage BV
CBO
70 V
Power dissipation P
diss
100 mW
Derate linearly from 25 °C 1.33 mW/°C
7.62 mm
DIP-8
ILD766
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 03-Aug-11
2
Document Number: 83643
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
COUPLER
Total dissipation P
tot
400 mW
Derate linearly from 25 °C 5.3 mW/°C
Isolation test voltage t = 1 s V
ISO
5300 V
RMS
Isolation resistance
T
amb
= 25 °C R
IO
t10
12
:
T
amb
= 100 °C R
IO
t 10
11
:
Creepage distance t 7.0 mm
Clearance distance t 7.0 mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
CTI 175
Storage temperature T
stg
- 55 to + 150 °C
Operating temperature T
amb
- 55 to + 100 °C
Lead soldering time at 260 °C 10 s
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= ± 10 mA V
F
1.2 1.5 V
OUTPUT
Collector emitter breakdown voltage I
C
= 1.0 mA BV
CEO
60 75 V
Collector base breakdown voltage I
C
= 10 μA BV
CBO
60 90 V
Collector emitter leakage current V
CE
= 10 V I
CEO
10 100 nA
COUPLER
Collector emitter saturation voltage I
F
= ± 10 mA, I
C
= 10 mA V
CEsat
1.0 V
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
DC current transfer ratio V
CE
= 5.0 V, I
F
= ± 2 mA CTR
DC
500 %
SWITCHING CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Rise time
V
CC
= 10 V, I
F
= ± 2.0 mA,
R
L
= 100 :
t
r
100
μs
Fall time t
f
100
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
ILD766
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 03-Aug-11
3
Document Number: 83643
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Input Characteristics
Fig. 2 - Transistor Current vs. Voltage
Fig. 3 - Transistor Output Current vs. Voltage
Fig. 4 - I
CEO
at V
CE
= 10 V vs. Temperature
Fig. 5 - Normalized CTR vs. Forward Current
Fig. 6 - t
r
vs. Forward Current
60
40
20
- 20
- 40
- 60
0
- 2.0 - 1.0 0 1.0 2.0
iil766_01
V
F
- Input Voltage (V)
I
F
- Input Current (mA)
100
0
10
20
30
40
50
60
70
80
90
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
iil766_02
Collector Voltage (V)
I
F
= 12 mA
I
C
- Collector Current (mA)
I
F
= 10 mA
I
F
= 8 mA
I
F
= 6 mA
I
F
= 4 mA
I
F
= 2 mA
200
0
20
40
60
80
100
120
140
160
180
0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
iil766_03
V
CE
- Collector Voltage (V)
I
F
= 50 mA
I
C
- Collector Current (mA)
I
F
= 40 mA
I
F
= 30 mA
I
F
= 20 mA
I
F
= 10 mA
I
F
= 0
10
4
1
1
10
10
2
10
3
0 25 50 75 100 125
iil766_04
Temperature (°C)
I
D
- Dark Current (nA)
iil766_05
NCTR
ce
- Normalized CTR
0.1 1 10 100
10
1
0.1
0.01
I
F
- LED Current (mA)
V
CE
= 1 V
V
CE
= 5 V
Normalized to:
I
F
= 10 mA
T
A
= 25 °C
iil766_06
t
r
(μs)
1
30
20
10
0.0
I
F
- LED Current (mA)
R
L
= 1 kΩ
R
L
= 10 kΩ
10
P1-P3P4-P6

ILD766-1

Mfr. #:
Buy ILD766-1
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Photodarlington Out Dual CTR >500%
Lifecycle:
New from this manufacturer.
Delivery:
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