TYN412RG

Custom Data
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April 2007 Rev 1 1/7
7
TYN412
Standard
12 A SCR
Main features
Description
TYN412 with standard gate triggering levels, is a
12 A SCR suitable to fit all modes of control,
found in applications such as overvoltage crowbar
protection, motor control circuits in power tools
and kitchen aids, inrush current limiting circuits,
capacitive discharge ignition and voltage
regulation circuits.
Order codes
Symbol Value Unit
I
T(RMS)
12 A
V
DRM
/V
RRM
400 V
I
GT
15 mA
Part Numbers Marking
TYN412RG TYN412
A
K
G
A
K
G
A
TO-220AB
TYN412RG
Table 1. Absolute ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (180° conduction angle) T
c
= 105° C 12 A
I
T(AV)
Average on-state current (180° conduction angle) T
c
= 105° C 8 A
I
TSM
Non repetitive surge peak on-state
current
t
p
= 8.3 ms
T
j
= 25° C
146
A
t
p
= 10 ms 140
I
²
tI
²
t Value for fusing t
p
= 10 ms T
j
= 25° C 98 A
2
S
dI/dt
Critical rate of rise of on-state current I
G
= 2 x I
GT
, t
r
100 ns
F = 60 Hz T
j
= 125° C 100 A/µs
I
GM
Peak gate current t
p
= 20 µs T
j
= 125° C 4 A
P
G(AV)
Average gate power dissipation T
j
= 125° C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
° C
V
RGM
Maximum peak reverse gate voltage 5 V
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Characteristics TYN412
2/7
1 Characteristics
Table 2. Electrical characteristics (T
j
= 25° C, unless otherwise specified)
Symbol Test Conditions Value Unit
I
GT
V
D
= 12 V R
L
= 33 Ω
MIN. 2
mA
MAX. 15
V
GT
V
D
= 12 V R
L
= 33 Ω
MIN. 0.5 V
TYP. 0.7
MAX. 1.3
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125° C MIN. 0.2 V
I
H
I
T
= 500 mA Gate open MAX. 30 mA
I
L
I
G
= 1.2 I
GT
MAX. 60 mA
dV/dt V
D
= 67 % V
DRM
Gate open T
j
=125° C MIN. 200 V/µs
V
TM
I
TM
= 24 A t
p
= 380 µs T
j
= 25° C MAX. 1.6 V
V
t0
Threshold voltage T
j
= 125° C MAX. 0.85 V
R
d
Dynamic resistance T
j
= 125° C MAX. 30 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25° C
MAX.
0.01 mA
T
j
= 125° C 3 mA
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (DC) 1.3 ° C/W
R
th(j-a)
Junction to ambient (DC) 60 ° C/W
Figure 1. Maximum average power
dissipation versus average
on-state current
Figure 2. Average and D.C. on-state current
versus case temperature
0123456789
0
1
2
3
4
5
6
7
8
9
10
11
12
P(W)
I (A)
T(AV)
α = 180°
360°
α
0 25 50 75 100 125
0
2
4
6
8
10
12
14
I (A)
T(AV)
T (°C)
case
α = 180°
D.C.
TYN412 Characteristics
3/7
Figure 3. Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 4. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 5. Surge peak on-state current versus
number of cycles
Figure 6. Non-repetitive surge peak on-state
current for a sinusoidal pulse with
width tp < 10 ms, and
corresponding values of I²t
Figure 7. On-state characteristics (maximum
values)
Figure 8. Relative variation of gate trigger
current, holding current, latching
current and gate trigger voltage
versus junction temperature
(typical values)
1E-3 1E-2 1E-1 1E+0
0.1
0.2
0.5
1.0
K=[Z /R
th(j-c) th(j-c)
]
t (s)
p
1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00
K=[Z /R
th(j-a) th(j-a)
]
t (s)
p
1 10 100 1000
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
I (A)
TSM
Number of cycles
Non repetitive
T initial=25°C
j
Repetitive
T =105°C
C
t =10ms
p
One cycle
0.01 0.10 1.00 10.00
10
100
1000
2000
I (A), I t (A s)
TSM
22
t (ms)
p
I t
2
I
TSM
T initial = 25°C
j
dI/dt limitation
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
10
100
200
I (A)
TM
V (V)
TM
T
j
=max
T =25°C
j
V =0.85V
R =30m
T max.:
j
t0
d
Ω
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
I
GT
,I
H
,I
L,
V
GT
[T
j
]/I
GT
,I
H
,I
L,
V
GT
[T
j
=25°C]
I
GT
I
H
& I
L
VGT
T (°C)
j

TYN412RG

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
SCRs 12 Amp 400 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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