OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BSP60,115

P1-P3P4-P6P7-P9P10-P10
Nexperia
BSP60
PNP Darlington transistor
10. Characteristics
Table 7. Characteristics
T
j
= 25 °C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V
(BR)CBO
collector-base
breakdown voltage
I
C
= -100 µA; I
E
= 0 A -60 - - V
V
(BR)CES
collector-emitter
breakdown voltage
I
C
= -2 mA; V
BE
= 0 V -45 - - V
V
(BR)EBO
emitter-base
breakdown voltage
I
C
= 0 A; I
E
= -100 µA -5 - - V
I
CES
collector-emitter cut-off
current
V
BE
= 0 V; V
CE
= -45 V - - -50 nA
I
EBO
emitter-base cut-off
current
V
EB
= -4 V; I
C
= 0 A - - -50 nA
V
CE
= -10 V; I
C
= -150 mA [1] 1000 - - h
FE
DC current gain
V
CE
= -10 V; I
C
= -500 mA [1] 2000 - -
I
C
= -500 mA; I
B
= -0.5 mA - - -1.3 VV
CEsat
collector-emitter
saturation voltage
I
C
= -500 mA; I
B
= -0.5 mA; T
j
= 150 °C - - -1.3 V
V
BEsat
base-emitter saturation
voltage
I
C
= -500 mA; I
B
= -0.5 mA - - -1.9 V
t
on
turn-on time - 400 - ns
t
off
turn-off time
I
C
= -500 mA; I
Bon
= -0.5 mA;
I
Boff
= 0.5 mA
- 1500 - ns
f
T
transition frequency V
CE
= -5 V; I
C
= -500 mA; f = 100 MHz - 200 - MHz
[1] Pulse test: t
p
≤ 300 μs; δ ≤ 0.02.
mgd839
0
6000
2000
1000
3000
4000
5000
- 10
- 1
- 1 - 10 - 10
2
- 10
3
h
FE
I
C
(mA)
V
CE
= -10 V
Fig. 1. DC current gain; typical values
BSP60 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 2 May 2018 4 / 10
Nexperia
BSP60
PNP Darlington transistor
11. Test information
006aaa266
-
I
Bon
(100 %)
-
I
B
input pulse
(idealized waveform)
-
I
Boff
90 %
10 %
-
I
C
(100 %)
-
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
Fig. 2. Transistor switching time definition
R
C
R2
R1
DUT
mgd624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
V
I
= -10 V; T = 200 µs; t
p
= 6 µs; t
r
= t
f
≤ 3 ns.
R1 = 56 Ω; R2 = 10 kΩ; R
B
= 10 kΩ; R
C
= 18 Ω.
V
BB
= 1.8 V; V
CC
= -10.7 V.
Oscilloscope: input impedance Z
i
= 50 Ω.
Fig. 3. Test circuit or switching times
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
BSP60 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 2 May 2018 5 / 10
Nexperia
BSP60
PNP Darlington transistor
12. Package outline
UNIT A
1
b
p
c D E e
1
H
E
L
p
Q ywv
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
mm
0.10
0.01
1.8
1.5
0.80
0.60
b
1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
2.3
e
4.6
7.3
6.7
1.1
0.7
0.95
0.85
0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 SC-73
04-11-10
06-03-16
w M
b
p
D
b
1
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
v M
A
AB
B
c
y
0 2 4 mm
scale
A
X
1 32
4
Plastic surface-mounted package with increased heatsink; 4 leads SOT223
Fig. 4. Package outline SC-73 (SOT223)
BSP60 All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet 2 May 2018 6 / 10
P1-P3P4-P6P7-P9P10-P10

BSP60,115

Mfr. #:
Buy BSP60,115
Manufacturer:
Nexperia
Description:
Darlington Transistors TRANS DARLINGTON
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet