IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFP8N85XM
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
g
fs
V
DS
= 10V, I
D
= 4A, Note 1 2.7 4.5 S
R
Gi
Gate Input Resistance 3
C
iss
654 pF
C
oss
V
GS
= 0V, V
DS
= 25V, f = 1MHz 714 pF
C
rss
11 pF
C
o(er)
40 pF
C
o(tr)
120 pF
Q
g(on)
17.0 nC
Q
gs
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 4A 3.6 nC
Q
gd
10.0 nC
t
d(on)
15 ns
t
r
25 ns
t
d(off)
32 ns
t
f
23 ns
R
thJC
3.78 C/W
R
thCS
0.50 C/W
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 4A
R
G
= 10 (External)
Effective Output Capacitance
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max
I
S
V
GS
= 0V 8 A
I
SM
Repetitive, pulse Width Limited by T
JM
32 A
V
SD
I
F
= I
S
, V
GS
= 0V, Note 1 1.4 V
t
rr
125 ns
Q
RM
1.1 μC
I
RM
18.0 A
I
F
= 4A, -di/dt = 100A/μs
V
R
= 100V
Terminals: 1 - Gate
2 - Drain
3 - Source
1
2
3
OVERMOLDED TO-220
(IXFP...M)
oP
