IS31AP4990D
Integrated Silicon Solution, Inc. – www.issi.com 5
Rev. C, 06/24/2014
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V
CC
-0.3V ~ +6.0V
Voltage at any input pin
-0.3V ~ V
CC
+0.3V
Maximum junction temperature, T
JMAX
150°C
Storage temperature range, T
STG
-65°C ~ +150°C
Operating temperature range, T
A
−40°C ~ +85°C
ESD (HBM)
ESD (CDM)
7kV
500V
Note:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
T
A
= -40°C ~ +85°C, V
CC
= 2.7V ~ 5.5V, unless otherwise noted. Typical value are T
A
= +25°C.
Symbol Parameter Condition Min. Typ. Max. Unit
V
CC
Power supply 2.7 5.5 V
I
CC
Quiescent current
V
CC
= 5V, V
IN
= 0V, I
O
= 0A, no load 3.8 6.4
mA
V
CC
= 3V, V
IN
= 0V, I
O
= 0A, no load 2.8 5.1
I
SD
Shutdown current V
SDB
= GND, no load 1 μA
V
IH
Shutdown voltage input high 1.4 V
V
IL
Shutdown voltage input low 0.4 V
V
OS
Output offset voltage
25 mV
Po Output power (8Ω)
V
CC
= 5V
THD+N = 1%, f = 1kHz 1.20
W
THD+N = 10%, f = 1kHz 1.50
V
CC
= 3V
THD+N = 1%, f = 1kHz 0.418
THD+N = 10%, f = 1kHz 0.525
t
WU
Wake-up time (Note 1)
V
CC
= 5V, C
BYPASS
= 1μF 115
ms
V
CC
= 3V, C
BYPASS
= 1μF 102
THD+N
Total harmonic distortion +
noise (Note 1)
V
CC
= 5V, P
O
= 0.5Wrms, f = 1kHz 0.23
%
V
CC
= 3V, Po = 0.3Wrms, f = 1kHz 0.15
PSRR
Power supply rejection ratio
(Note 1)
V
CC
= 5V
V
Ripple p-p
= 200mV
Input grounded
f = 217Hz 61
dB
f = 1kHz 65
V
CC
= 3.6V, 4.2V
V
Ripple p-p
= 200mV
Input grounded
f = 217Hz 62
f = 1kHz 66
Note 1: Guaranteed by design.
