OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BSO207PNTMA1

P1-P3P4-P6P7-P8
2001-11-20
Page 4
Preliminary data
BSO207P
1 Power dissipation
P
tot
= f (T
A
)
0 20 40 60 80 100 120
°C
160
T
C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
W
2.6
BSO207P
P
tot
2 Drain current
I
D
= f (T
A
)
parameter: |V
GS
|≥ 4.5 V
0 20 40 60 80 100 120
°C
160
T
C
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
-4.5
-5
-5.5
A
-6.5
BSO207P
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
= 25 °C
-10
-1
-10
0
-10
1
-10
2
V
V
DS
-2
-10
-1
-10
0
-10
1
-10
2
-10
A
BSO207P
I
D
R
D
S
(
o
n
)
=
V
D
S
/
I
D
DC
10 ms
1 ms
100 µs
t
p
= 57.0µs
4 Transient thermal impedance
Z
thJS
= f (t
p
)
parameter : D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
BSO207P
Z
thJS
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2001-11-20
Page 5
Preliminary data
BSO207P
5 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25°C
parameter: t
p
= 80 µs
0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4
V
-5
V
DS
0
-1
-2
-3
-4
-5
-6
-7
-8
-9
-10
-11
-12
A
-14
BSO207P
I
D
V
GS
[V]
a
a -1.8
b
b -1.9
c
c -2.0
d
d -2.1
e
e -2.2
f
f -2.3
g
g -2.4
h
h -2.5
i
P
tot
= 2W
i -4.5
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
0 -2 -4 -6 -8 -10
A
-13
I
D
0
10
20
30
40
50
60
70
80
90
100
110
120
mΩ
150
BSO207P
R
DS(on)
V
GS
[V] =
c
c
-2.0
d
d
-2.1
e
e
-2.2
f
f
-2.3
g
g
-2.4
h
h
-2.5
i
i
-4.5
7 Typ. transfer characteristics
I
D
= f ( V
GS
); |V
DS
|≥ 2 x |I
D
| x R
DS(on)max
parameter: t
p
= 80 µs
0 0.5 1 1.5 2
V
3
- V
GS
0
5
10
15
20
25
A
35
- I
D
8 Typ. forward transconductance
g
fs
= f(I
D
); T
j
=25°C
parameter: t
p
= 80 µs
0 5 10 15 20 25
A
35
- I
D
0
5
10
15
20
25
S
35
g
fs
2001-11-20
Page 6
Preliminary data
BSO207P
9 Drain-source on-resistance
R
DS(on)
= f(T
j
)
parameter: I
D
= -5.7 A, V
GS
= -4.5 V
-60 -20 20 60 100
°C
160
T
j
20
25
30
35
40
45
50
mΩ
60
R
DS(on)
typ.
98%
10 Gate threshold voltage
V
GS(th)
= f (T
j
)
parameter: V
GS
= V
DS
, I
D
= -40 µA
-60 -20 20 60 100
°C
160
T
j
0
0.2
0.4
0.6
0.8
1
1.2
V
1.6
- V
GS(th)
2%
98%
typ.
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: T
j
, tp = 80 µs
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4
V
-3
V
SD
-1
-10
0
-10
1
-10
2
-10
A
BSO207P
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0, f=1 MHz
0 2.5 5 7.5 10
V
15
- V
DS
2
10
3
10
4
10
pF
C
C
iss
C
oss
C
rss
P1-P3P4-P6P7-P8

BSO207PNTMA1

Mfr. #:
Buy BSO207PNTMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET 2P-CH 20V 5.7A 8SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet