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APT30SCD120B

P1-P3P4-P4
050-7703 Rev A 10 - 2012
PRODUCT BENEFITS
• Higher Reliability Systems
• Minimizes or eliminates
snubber
PRODUCT FEATURES
• Zero Recovery Times (t
rr
)
• Popular TO-247 Package or
surface mount D
3
PAK package
• Low Forward Voltage
• Low Leakage Current
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Power Factor Correction (PFC)
APT30SCD120B
APT30SCD120S
1200V 30A
MAXIMUM RATINGS T
C
= 25°C unless otherwise specifi ed.
Microsemi Website - http://www.microsemi.com
Zero Recovery Silicon Carbide Schottky Diode
Symbol Characteristic / Test Conditions Ratings Unit
V
R
Maximum D.C. Reverse Voltage
1200 VoltsV
RRM
Maximum Peak Repetitive Reverse Voltage
V
RWM
Maximum Working Peak Reverse Voltage
I
F
Maximum D.C. Forward current
T
C
= 25°C 99
Amps
T
C
= 135°C 29
I
FRM
Repetitive Peak Forward Suge Current (T
J
= 45°C, t
p
= 10ms, Half Sine Wave)
150
I
FSM
Non-Repetitive Forward Surge Current (T
J
= 25°C, t
p
= 10ms, Half Sine)
330
P
tot
Power Dissipation
T
C
= 25°C 291
W
T
C
= 125°C 93
T
J
, T
STG
Operating and Storage Junction Temperature Range -55 to 150
°C
T
L
Lead Temperature for 10 Seconds 300
Symbol Characteristic / Test Conditions Min Typ Max Unit
V
F
Forward Voltage
I
F
= 30A T
J
= 25°C 1.5 1.8
Volts
I
F
= 30A, T
J
= 150°C 2.1
I
RM
Maximum Reverse Leakage Current
V
R
= 1200V T
J
= 25°C 600
A
V
R
= 1200V, T
J
= 150°C 3000
Q
c
Total Capactive Charge V
R
= 800V, I
F
= 30A, di/dt = -100A/s, T
J
= 25°C 200 nC
C
T
Junction Capacitance V
R
= 0V, T
J
= 25°C, f = 1MHz 2100
pFJunction Capacitance V
R
= 200V, T
J
= 25°C, f = 1MHz 228
Junction Capacitance V
R
= 400V, T
J
= 25°C, f = 1MHz 167
STATIC ELECTRICAL CHARACTERISTICS
1 - Cathode
2 - Anode
Back of Case -Cathode
T
O
-
2
4
7
1
2
D
3
PAK
1
2
APT30SCD120B_S
050-7703 Rev A 10 - 2012
THERMAL AND MECHANICAL CHARACTERISTICS
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
Symbol Characteristic / Test Conditions Min Typ Max Unit
R
JC
Junction-to-Case Thermal Resistance 0.43 °C/W
W
T
Package Weight
0.22 oz
5.9 g
Torque Maximum Mounting Torque
10 lb·in
1.1 N·m
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.60
0
10
-4
10
-3
10
-2
0.1 1 10 100
10
-5
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
Z
JC
, THERMAL IMPEDANCE (°C/W)
Peak T
J
= P
DM
x Z
θJC
+
T
C
Duty Factor D =
t
1
/
t
2
t
2
t
1
P
DM
Note:
0
20
40
60
80
100
120
140
0 1 2 3 4 5 6 7 8
0
20
40
60
80
100
25 50 75 100 125 150
V
F
, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
I
F
, FORWARD CURRENT (A)
Case Temperature (°C)
FIGURE 3, Maximum Forward Current vs. Case Temperature
100
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
T
J
= 150°C
TYPICAL PERFORMANCE CURVES
I
F
(peak) (A)
050-7703 Rev A 10-2012
APT30SCD120B_S
TYPICAL PERFORMANCE CURVES
0
50
100
150
200
250
300
25 50 75 100 125 150
CASE TEMPERATURE (°C)
Figure 4. Maximum Power Dissipation vs. Case Temperature
P
total
(w)
150
170
190
210
230
250
270
290
200 300 400 500 600 700 800
0
200
400
600
800
1000
1200
1400
0 200 400 600 800 1000 1200 1400
0
100
200
300
400
500
0 200 400 600 800
V
R
, REVERSE VOLTAGE (V)
Figure 6. Reverse Recovery Charge vs. V
R
Q
rr
, REVERSE RECOVERY CHARGE
(nC)
V
R
, REVERSE VOLTAGE (V)
Figure 5. Reverse Leakage Currents vs. Reverse Voltage
I
R
, REVERSE LEAKAGE CURRENT (A)
V
R
, REVERSE VOLTAGE (V)
Figure 7. Junction Capacitance vs. Reverse Voltage
C
J
, JUNCTION CAPACITANCE (pF)
25°C
75°C
125°C
150°C
15.85 (.624)
16.05(.632)
18.70 (.736)
19.10 (.752)
1.15 (.045)
1.45 (.057)
5.45 (.215) BSC
(2 Plcs. )
4.90 (.193)
5.10 (.201)
1.45 (.057)
1.60 (.063)
2.70 (.106)
2.90 (.114)
0.40 (.016)
0.65 (.026)
Heat Sink (Cathode)
and Leads
are Plated
2.40 (.094)
2.70 (.106)
(Base of Lead)
Cathode
(Heat Sink)
1.90 (.075)
2.10 (.083)
Cathode
Anode
0.020 (.001)
0.250 (.010)
1.20 (.047)
1.40 (.055)
12.40 (.488)
12.70 (.500)
13.30 (.524)
13.60(.535)
1.00 (.039)
1.15(.045)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max .
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
10.90 (.430) BSC
3.50 (.138)
3.81 (.150)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
Cathode
Anode
Cathode
TO-247 Package Outline D
3
PAK Package Outline
1.016(.040)
Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches)
d
if
/d
t
= -200A/s
T
J
= 125°C
P1-P3P4-P4

APT30SCD120B

Mfr. #:
Buy APT30SCD120B
Manufacturer:
Microchip / Microsemi
Description:
Schottky Diodes & Rectifiers
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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