ZTX705

PNP SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 3  MAY 94
FEATURES
* 120 Volt V
CEO
* 1 Amp continuous current
* Gain of 3K at I
C
=1 Amp
*P
tot
=1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX704 ZTX705 UNIT
Collector-Base Voltage V
CBO
-120 -140 V
Collector-Emitter Voltage V
CEO
-100 -120 V
Emitter-Base Voltage V
EBO
-10 V
Peak Pulse Current I
CM
-4 A
Continuous Collector Current I
C
-1 A
Power Dissipation at T
amb
= 25°C
derate above 25°C
P
tot
1
5.7
W
mW/ °C
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL ZTX704 ZTX705 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-120 -140 V
I
C
=-100µA
Collector-Emitter
Breakdown Voltage
V
CEO(SUS)
-100 -120 V I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-10 -10 V
I
E
=-100µA
Collector Cut-Off
Current
I
CBO
-0.1
-10
-0.1
-10
µA
µA
µA
µA
V
CB
=-100V
V
CB
=-120V
V
CB
=-100V, T
amb
=100°C
V
CB
=-120V, T
amb
=100°C
Collector Cut-Off
Current
I
CES
-10 -10
µA
V
CES
=-80V
Emitter Cut-Off
Current
I
EBO
-0.1 -0.1
µA
V
EB
=-8V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-1.3
-2.5
-1.3
-2.5
V
V
I
C
=-1A, I
B
=-1mA*
I
C
=-2A, I
B
=-2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.8 -1.8 V I
C
=-1A, I
B
=-10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-1.7 -1.7 V IC=-1A, V
CE
=-5V*
ZTX704
ZTX705
3-250
C
B
E
E-Line
TO92 Compatible
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL ZTX704 ZTX705 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Static Forward
Current Transfer
Ratio
h
FE
3K
3K
3K
2K
30K
3K
3K
3K
2K
30K
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
Transition
Frequency
f
T
160 Typical 160 Typical MHz I
C
=-100mA, V
CE
=-10V
f=20MHz
Input Capacitance C
ibo
90 Typical 90 Typical pF V
EB
=-0.5V, f=1MHz
Output Capacitance C
obo
15 Typical 15 Typical pF V
CE
=-10V, f=1MHz
Switching Times t
on
0.6 Typical 0.6 Typical
µs
I
C
=-0.5A, V
CE
=-10V
I
B1
=I
B2
=-0.5mA
t
off
0.8 Typical 0.8 Typical
µs
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle 2%
The maximum permissible operational temperature can be obtained from this graph using
the following equation
T
( )
=
Power(max ) Power (act)
0.0057
+25° C
T
amb(max )
= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given V
CE
and source resistance (R
S
)
Power(actual)= Actual power dissipation in users circuit
ZTX704
ZTX705
Voltage Derating Graph
V
CE
- Collector-Emitter Voltage (Volts)
1.0
0.8
0.6
0.4
0
0.2
R = 22K
110100
DC Conditions
R = 100K
R = 1M
R =
Maximum Power Dissipation (W)
3-251
PNP SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 3  MAY 94
FEATURES
* 120 Volt V
CEO
* 1 Amp continuous current
* Gain of 3K at I
C
=1 Amp
*P
tot
=1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX704 ZTX705 UNIT
Collector-Base Voltage V
CBO
-120 -140 V
Collector-Emitter Voltage V
CEO
-100 -120 V
Emitter-Base Voltage V
EBO
-10 V
Peak Pulse Current I
CM
-4 A
Continuous Collector Current I
C
-1 A
Power Dissipation at T
amb
= 25°C
derate above 25°C
P
tot
1
5.7
W
mW/ °C
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL ZTX704 ZTX705 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-120 -140 V
I
C
=-100µA
Collector-Emitter
Breakdown Voltage
V
CEO(SUS)
-100 -120 V I
C
=-10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-10 -10 V
I
E
=-100µA
Collector Cut-Off
Current
I
CBO
-0.1
-10
-0.1
-10
µA
µA
µA
µA
V
CB
=-100V
V
CB
=-120V
V
CB
=-100V, T
amb
=100°C
V
CB
=-120V, T
amb
=100°C
Collector Cut-Off
Current
I
CES
-10 -10
µA
V
CES
=-80V
Emitter Cut-Off
Current
I
EBO
-0.1 -0.1
µA
V
EB
=-8V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-1.3
-2.5
-1.3
-2.5
V
V
I
C
=-1A, I
B
=-1mA*
I
C
=-2A, I
B
=-2mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.8 -1.8 V I
C
=-1A, I
B
=-10mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
-1.7 -1.7 V IC=-1A, V
CE
=-5V*
ZTX704
ZTX705
3-250
C
B
E
E-Line
TO92 Compatible
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL ZTX704 ZTX705 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Static Forward
Current Transfer
Ratio
h
FE
3K
3K
3K
2K
30K
3K
3K
3K
2K
30K
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
Transition
Frequency
f
T
160 Typical 160 Typical MHz I
C
=-100mA, V
CE
=-10V
f=20MHz
Input Capacitance C
ibo
90 Typical 90 Typical pF V
EB
=-0.5V, f=1MHz
Output Capacitance C
obo
15 Typical 15 Typical pF V
CE
=-10V, f=1MHz
Switching Times t
on
0.6 Typical 0.6 Typical
µs
I
C
=-0.5A, V
CE
=-10V
I
B1
=I
B2
=-0.5mA
t
off
0.8 Typical 0.8 Typical
µs
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle 2%
The maximum permissible operational temperature can be obtained from this graph using
the following equation
T
( )
=
Power(max ) Power (act)
0.0057
+25° C
T
amb(max )
= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a
given V
CE
and source resistance (R
S
)
Power(actual)= Actual power dissipation in users circuit
ZTX704
ZTX705
Voltage Derating Graph
V
CE
- Collector-Emitter Voltage (Volts)
1.0
0.8
0.6
0.4
0
0.2
R = 22K
110100
DC Conditions
R = 100K
R = 1M
R =
Maximum Power Dissipation (W)
3-251
0.01 0.1 20110
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
C
E
(sat)
-
(
V
olts)
I
C
- Co
l
le
c
to
r
Cur
r
e
n
t (
Am
ps)
VCE - Collector Voltage (Volts)
Safe Operating Area
100110
0.1
1
10
Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.01 0.1 20
1
10
10k
8k
6k
4k
0
2k
16k
14k
12k
+100°C
+25°C
-55°C
IC - Collector Current (Amps)
h
FE
v I
C
h
FE
- Gain
V
CE
=-5V
0.001
0.01 0.1 20110
-55°C
+25°C
+100°C
+175°C
IC - Collector Current (Amps)
V
BE(sat)
v I
C
V
BE
(sa
t
)
- (V
olts)
I
C
/I
B
=1000
0.001
0.01 0.1 20110
0.8
0.6
1.8
2.4
2.2
2.0
-55°C
+25°C
+100°C
IC - Collector Current (Amps)
V
BE(on)
v I
C
V
BE
-
(V
olts)
V
CE
=-5V
0.001
1.0
0.8
0.6
0.4
1.6
1.4
1.2
1.8
1.0
0.8
0.6
0.4
1.6
1.4
1.2
1.8
1.0
1.6
1.4
1.2
ZTX704
ZT
X
70
5
1000
I
C
/I
B
=1000
-55°C
+25°C
+100°C
+175°C
0.2
0.2
ZTX704
ZTX705
3-252

ZTX705

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Darlington Transistors PNP 120V TRANS 1A 3K Gain 1W
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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