BD437

BD433/5/7

BD434/6/8

COMPLEMENTARY SILICON POWER TRANSISTORS

■ STMicroelectronics PREFERRED

SALESTYPE

■ COMPLEMENTARY PNP - NPN DEVICES

DESCRIPTION

The BD433, BD435, and BD437 are silicon

epitaxial-base NPN power transistors in Jedec

SOT-32 plastic package, intented for use in

medium power linear and switching applications.

The BD433 is especially suitable for use in

car-radio output stages.

The complementary PNP types are BD434,

BD436, and BD438 respectively.

®

INTERNAL SCHEMATIC DIAGRAM

February 2003

3

2

1

SOT-32

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

NPN BD433 BD435 BD437

PNP BD434 BD436 BD438

V

CBO

Collector-Base Voltage (I

E

= 0) 22 32 45 V

V

CES

Collector-Emitter Voltage (V

BE

= 0) 22 32 45 V

V

CEO

Collector-Emitter Voltage (I

B

= 0) 22 32 45 V

V

EBO

Emitter-Base Voltage (I

C

= 0) 5 V

I

C

Collector Current 4 A

I

CM

Collector Peak Current (t ≤ 10 ms)

7A

I

B

Base Current 1 A

P

tot

Total Dissipation at T

c

≤ 25

o

C

36 W

T

stg

Storage Temperature -65 to 150

o

C

T

j

Max. Operating Junction Temperature 150

o

C

For PNP types voltage and current values are negative.

1/4

THERMAL DATA

R

thj-case

R

thj-amb

Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

3.5

100

o

C/W

o

C/W

ELECTRICAL CHARACTERISTICS (T

case

= 25

o

C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CBO

Collector Cut-off

Current (I

E

= 0)

for BD433/434 V

CB

= 22 V

for BD435/436 V

CB

= 32 V

for BD437/438 V

CB

= 45 V

100

100

100

µA

µA

µA

I

CES

Collector Cut-off

Current (V

BE

= 0)

for BD433/434 V

CE

= 22 V

for BD435/436 V

CE

= 32 V

for BD437/438 V

CE

= 45 V

100

100

100

µA

µA

µA

I

EBO

Emitter Cut-off Current

(I

C

= 0)

V

EB

= 5 V 1 mA

V

CEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(I

B

= 0)

I

C

= 100 mA for BD433/434

for BD435/436

for BD437/438

22

32

45

V

V

V

V

CE(sat)

∗ Collector-Emitter

Saturation Voltage

I

C

= 2 A I

B

= 0.2 A

for BD433/434

for BD435/436

for BD437/438

0.2

0.2

0.2

0.5

0.5

0.6

V

V

V

V

BE

∗ Base-Emitter Voltage I

C

= 10 mA V

CE

= 5 V

I

C

= 2 A V

CE

= 1 V

for BD433/434

for BD435/436

for BD437/438

0.58

1.1

1.1

1.2

V

V

V

V

h

FE

∗ DC Current Gain I

C

= 10 mA V

CE

= 5 V

for BD433/434

for BD435/436

for BD437/438

I

C

= 500 mA V

CE

= 1 V

I

C

= 2 A V

CE

= 1 V

for BD433/434

for BD435/436

for BD437/438

40

40

30

85

50

50

40

130

130

130

140

h

FE1

/h

FE2

∗ Matched Pair I

C

= 500 mA V

CE

= 1 V 1.4

f

T

Transition frequency I

C

= 250 mA V

CE

= 1 V 3 MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BD433 BD434 BD435 BD436 BD437 BD438

2/4

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 7.4 7.8 0.291 0.307

B 10.5 10.8 0.413 0.425

b 0.7 0.9 0.028 0.035

b1 0.40 0.65 0.015 0.025

C 2.4 2.7 0.094 0.106

c1 1.0 1.3 0.039 0.051

D 15.4 16.0 0.606 0.630

e 2.2 0.087

e3 4.4 0.173

F 3.8 0.150

G 3 3.2 0.118 0.126

H 2.54 0.100

H2 2.15 0.084

I 1.27 0.05

O 0.3 0.011

V10

o

10

o

0016114/B

SOT-32 (TO-126) MECHANICAL DATA

1: Base

2: Collector

3: Emitter

BD433 BD434 BD435 BD436 BD437 BD438

3/4

BD437

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

Bipolar Transistors - BJT NPN Medium Power

Lifecycle:

New from this manufacturer.

Delivery:

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