APTM50HM75FTG Datasheet APTM50HM75FTG | P1-P3

APTM50HM75FTG

APTM50HM75FTG – Rev 2 July, 2006

www.microsemi.com 1

–

6

S3

G3

S4

G4

NTC2

S1

G1

OUT2OUT1

VBUS

Q1

Q2

S2

G2

0/VBU SNT C1

Q3

Q4

OUT1

OUT2

NTC1

NTC2

G3

S3

VBUS

G1

S1

G4

G2

S2

0/VBUS

S4

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

S

ymbol Parameter Max ratings Unit

V

DSS

Drain - Source Breakdown Voltage 500 V

T

c

= 25°C 46

I

D

Continuous Drain Current

T

c

= 80°C 34

I

DM

Pulsed Drain current 184

A

V

GS

Gate - Source Voltage ±30 V

R

DSon

Drain - Source ON Resistance 90

mΩ

P

D

Maximum Power Dissipation T

c

= 25°C 357 W

I

AR

Avalanche current (repetitive and non repetitive) 46 A

E

AR

Repetitive Avalanche Energy 50

E

AS

Single Pulse Avalanche Energy 2500

mJ

V

DSS

= 500V

R

DSon

= 75mΩ typ @ Tj = 25°C

I

D

= 46A @ Tc = 25°C

Applicatio

n

• Welding converters

• Switched Mode Power Supplies

• Uninterruptible Power Supplies

Features

• Power MOS 7

®

FREDFETs

- Low R

DSon

- Low input and Miller capacitance

- Low gate c harge

- Fast intrinsic reverse diode

- Avalanche energy rated

- Very rugged

• Kelvin source for easy drive

• Very low stray inductance

- Symmetrical design

- Lead frames for power connections

• Internal thermistor for temperature monitoring

• High level of integration

Benefits

• Outsta ndi ng perfor mance at hi gh frequency operation

• Direct mounting to heatsink (isolated package)

• Low junction to case thermal resistance

• Solderable terminals both for power and signal for

easy PCB mounting

• Low profile

• RoHS Compliant

F

ull - Bridge

MOSFET Power Module

APTM50HM75FTG

APTM50HM75FTG – Rev 2 July, 2006

www.microsemi.com 2

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6

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

GS

= 0V,V

DS

= 500V T

j

= 25°C 100

I

DSS

Zero Gate Voltage Drain Current

V

GS

= 0V,V

DS

= 400V T

j

= 125°C 500

µA

R

DS(on)

Drain – Source on Resistance V

GS

= 10V, I

D

= 23A

75 90

mΩ

V

GS(th)

Gate Threshold Voltage V

GS

= V

DS

, I

D

= 2.5mA 3 5 V

I

GS S

Gate – Source Leakage Current V

GS

= ±30 V, V

DS

= 0V ±100 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

is s

Input Capacitance 5600

C

oss

Output Capacitance 1200

C

rss

Reverse Transfer Capacitance

V

GS

= 0V

V

DS

= 25V

f = 1MHz

90

pF

Q

g

Total gate Charge 123

Q

gs

Gate – Source Charge 33

Q

gd

Gate – Drain Charge

V

GS

= 10V

V

Bus

= 250V

I

D

= 46A

65

nC

T

d(on)

Tur n-on Delay Ti me 18

T

r

Rise Time 35

T

d(off)

Turn-off Delay Time 87

T

f

Fall Time

Inductive switching @ 125°C

V

GS

= 15V

V

Bus

= 333V

I

D

= 46A

R

G

= 5Ω

77

ns

E

on

Turn-on Switching Energy 755

E

off

Turn-off Switching Energy

Inductive switching @ 25°C

V

GS

= 15V, V

Bus

= 333V

I

D

= 46A,

R

G

= 5Ω 726

µJ

E

on

Turn-on Switching Energy 1241

E

off

Turn-off Switching Energy

Inductive switching @ 125°C

V

GS

= 15V, V

Bus

= 333V

I

D

= 46A,

R

G

= 5Ω

846

µJ

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Tc = 25°C 46 I

S

Continuous Source c urrent

(Body diode)

Tc = 80°C 34

A

V

SD

Diode Forward Voltage V

GS

= 0V, I

S

= - 46A 1.3 V

dv/dt Peak Diode Recovery X 15 V/ns

T

j

= 25°C 233

t

rr

Reverse Recovery Time

T

j

= 125°C 499

ns

T

j

= 25°C 1.9

Q

rr

Reverse Recovery Charge

I

S

= - 46A

V

R

= 333V

di

S

/dt = 100A/µs

T

j

= 125°C 5.7

µC

X dv/dt numbers reflect the limitations of the circuit rather than the device itself.

I

S

≤ - 46A di/dt ≤ 700A/µs V

R

≤ V

DSS

T

j

≤ 150°C

APTM50HM75FTG

APTM50HM75FTG – Rev 2 July, 2006

www.microsemi.com 3

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6

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

R

thJC

Junction to Case Thermal Resistance 0.35 °C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

2500 V

T

J

Operating junction temperature range

-40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

Torque Mounting torque To Heatsink M5 2.5 4.7 N.m

Wt Package Weight 160 g

Temperature sensor NTC

(see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

kΩ

B

25/85

T

25

= 298.15 K 3952

K

























−

=

TT

B

R

T

11

exp

25

85/25

25

SP4 Package outline (dimensions in mm)

ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :

See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value a t T

APTM50HM75FTG

APTM50HM75FTG

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