STPSC15H12WL Datasheet STPSC15H12WL, STPSC15H12D | P1-P3

May 2016

DocID029174 Rev 1

1/8

This is information on a product in full production.

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STPSC15H12

1200 V power Schottky silicon carbide diode

Datasheet - production data

Features

 No or negligible reverse recovery

 Switching behavior independent of

temperature

 Robust high voltage periphery

Description

The SiC diode, available in TO-220AC, is an

ultrahigh performance power Schottky rectifier. It

is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of

a low V

F

Schottky diode structure with a 1200 V

rating. Due to the Schottky construction, no

recovery is shown at turn-off and ringing patterns

are negligible. The minimal capacitive turn-off

behavior is independent of temperature.

Especially suited for use in PFC and secondary

side applications, this ST SiC diode will boost the

performance in hard switching conditions. This

rectifier will enhance the performance of the

targeted application. Its high forward surge

capability ensures a good robustness during

transient phases.

Table 1: Device summary

Symbol

Value

I

F(AV)

15 A

V

RRM

1200 V

T

j

(max.)

175 °C

V

F

(typ.)

1.35 V

A

K

A

K

TO-220AC

Characteristics

STPSC15H12

2/8

DocID029174 Rev 1

1 Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

V

RRM

Repetitive peak reverse voltage (T

j

= -40 °C to +175 °C)

1200

V

I

F(RMS)

Forward rms current

38

A

I

F(AV)

Average forward current

T

C

= 155 °C, DC current

15

A

I

FRM

Repetitive peak forward

current

T

C

= 155 °C, T

j

= 175 °C, δ = 0.1

58

A

I

FSM

Surge non repetitive forward

current

t

p

= 10 ms

sinusoidal

T

C

= 25 °C

105

A

T

C

= 150 °C

90

t

p

= 10 µs square

T

C

= 25 °C

630

T

stg

Storage temperature range

-65 to +175

°C

T

j

Operating junction temperature range

-40 to +175

°C

Table 3: Thermal parameters

Symbol

Parameter

Typ.

value

Max.

value

Unit

R

th(j-c)

Junction to case

0.45

0.6

°C/W

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

R

(1)

Reverse leakage current

T

j

= 25 °C

V

R

= V

RRM

-

7.5

90

µA

T

j

= 150 °C

-

45

600

V

F

(2)

Forward voltage drop

T

j

= 25 °C

I

F

= 15 A

-

1.35

1.50

V

T

j

= 150 °C

-

1.75

2.25

Notes:

(1)

Pulse test: t

p

= 10 ms, δ < 2%

(2)

Pulse test: t

p

= 500 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 1.09 x I

F(AV)

+ 0.0775 x I

F

2

(RMS)

Table 5: Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Q

Cj

(1)

Total capacitive charge

V

R

= 800 V

-

94

-

nC

C

j

Total capacitance

V

R

= 0 V, T

c

= 25 °C, F = 1 MHz

-

1200

-

pF

V

R

= 300 V, T

c

= 25 °C,

F = 1 MHz

-

100

-

Notes:

(1)

Most accurate value for the capacitive charge: 

























 



STPSC15H12

Characteristics

DocID029174 Rev 1

3/8

1.1 Characteristics (curves)

Figure 1: Forward voltage drop versus forward

current (typical values)

Figure 2: Reverse leakage current versus reverse

voltage applied (typical values)

Figure 3: Peak forward current versus case

temperature

Figure 4: Junction capacitance versus reverse

voltage applied (typical values)

0

5

10

15

20

25

30

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

F

(V)

T

a

= 150 °C

Pulse test : t

p

= 500 µs

T

a

= 25 °C

I

F

(A)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0 100 200 300 400 500 600 700 800 900 1000 1100 1200

V

R

(V)

T

j

= 25 °C

T

j

= 150°C

I

R

(µA)

0

20

40

60

80

100

120

140

0 25 50 75 100 125 150 175

T

c

(°C)

T

= tp/T

tp

δ = 0.1

δ = 0.3

δ = 0.5

δ = 1

δ = 0.7

δ

I

M

(A)

0

200

400

600

800

1000

1200

0.1 1.0 10.0 100.0 1000.0 10000.0

V

R

(V)

F = 1 MHz

V

OSC

= 30 mV

RMS

T

j

= 25°C

C

j

(pF)

STPSC15H12WL

STPSC15H12WL

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