© 1997 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 800 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 800 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
C
= 25°C 8N80 8 A
9N80 9 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
8N80 32 A
9N80 36 A
I
AR
T
C
= 25°C 8N80 8 A
9N80 9 A
E
AR
T
C
= 25°C18mJ
dv/dt I
S
≤ I
DM
, di/dt ≤ 100 A/µs, V
DD
≤ V
DSS
, 5 V/ns
T
J
≤ 150°C, R
G
= 2 Ω
P
D
T
C
= 25°C 180 W
T
J
-55 ... +150 °C
T
JM
150 °C
T
stg
-55 ... +150 °C
M
d
Mounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA 800 V
V
DSS
temperature coefficient 0.088 %/K
V
GS(th)
V
DS
= V
GS
, I
D
= 2.5 mA 2 4.5 V
V
GS(th)
temperature coefficient -0.257 %/K
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25°C 250 µA
V
GS
= 0 V T
J
= 125°C1mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
8N80 1.1 Ω
Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2% 9N80 0.9 Ω
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
Features
• International standard packages
• Low R
DS (on)
HDMOS
TM
process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
V
DSS
I
D25
R
DS(on)
t
rr
IXFH8N80 800V 8A 1.1Ω 250 ns
IXFH9N80 800V 9A 0.9Ω 250 ns
96527A (8/97)
Preliminary Data Sheet
G
S
D (TAB)
G = Gate D = Drain
S = Source TAB = Drain
*Add suffix letter "S" for surface mountable
package
TO-247 SMD*
