IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH8N80 IXFH9N80
110100
0.1
1
10
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the Intrinsic Diode
Figure 11. Transient Thermal Resistance
Figure10. Forward Bias Safe Operating Area
