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IRFZ44VPBF

P1-P3P4-P6P7-P8
IRFZ44VPbF
HEXFET
®
Power MOSFET
09/30/10
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 55
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 39 A
I
DM
Pulsed Drain Current 220
P
D
@T
C
= 25°C Power Dissipation 115 W
Linear Derating Factor 0.77 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
E
AS
Single Pulse Avalanche Energy 115 mJ
I
AR
Avalanche Current 55 A
E
AR
Repetitive Avalanche Energy 11 mJ
dv/dt Peak Diode Recovery dv/dt 4.5 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.3
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
R
θJA
Junction-to-Ambient ––– 62
Thermal Resistance
www.irf.com 1
V
DSS
= 60V
R
DS(on)
= 16.5mΩ
I
D
= 55A
S
D
G
TO-220AB
Advanced HEXFET
®
Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Optimized for SMPS Applications
Description
l Lead-Free
PD - 94826A
IRFZ44VPbF
2 www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode)
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 2.5 V T
J
= 25°C, I
S
= 51A, V
GS
= 0V
t
rr
Reverse Recovery Time ––– 70 105 ns T
J
= 25°C, I
F
= 51A
Q
rr
Reverse Recovery Charge ––– 146 219 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
55
220
A
Starting T
J
= 25°C, L = 89µH
R
G
= 25Ω, I
AS
= 51A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
I
SD
≤ 51A, di/dt ≤ 227A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.062 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance ––– ––– 16.5 mΩ V
GS
= 10V, I
D
= 31A
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 24 ––– ––– S V
DS
= 25V, I
D
= 31A
––– ––– 25
µA
V
DS
= 60V, V
GS
= 0V
––– ––– 250 V
DS
= 48V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100
nA
V
GS
= -20V
Q
g
Total Gate Charge ––– ––– 67 I
D
= 51A
Q
gs
Gate-to-Source Charge ––– ––– 18 nC V
DS
= 48V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 25 V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time ––– 13 ––– V
DD
= 30V
t
r
Rise Time ––– 97 ––– I
D
= 51A
t
d(off)
Turn-Off Delay Time ––– 40 ––– R
G
= 9.1Ω
t
f
Fall Time ––– 57 ––– R
D
= 0.6Ω, See Fig. 10
Between lead,
––– –––
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance ––– 1812 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 393 ––– V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 103 ––– pF ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance ––– –––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
IRFZ44VPBF
www.irf.com 3
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
0.1
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J
°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
55A
1
10
100
1000
4 5 6 7 8 9 10 11 12
V = 25V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
°
T = 175 C
J
°
P1-P3P4-P6P7-P8

IRFZ44VPBF

Mfr. #:
Buy IRFZ44VPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 60V 55A 16.5mOhm 44.7nC
Lifecycle:
New from this manufacturer.
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