ST2100C..R Series
3
Bulletin I25198 rev. B 02/00
www.irf.com
dv/dt Maximum linear rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
500 V/µs T
J
= T
J
max. to 67% rated V
DRM
Parameter ST2100C..R Units Conditions
250 mA T
J
= 125°C rated V
DRM
/V
RRM
applied
Blocking
P
GM
Maximum peak gate power 150 t
p
= 100µs
P
G(AV)
Maximum average gate power 10
I
GM
Max. peak positive gate current 30 A Anode positive with respect to cathode
V
GM
Max. peak positive gate voltage 30 V Anode positive with respect to cathode
-V
GM
Max. peak negative gate voltage 0.25 V Anode positive with respect to cathode
I
GT
Maximum DC gate current
required to trigger
V
GT
Maximum gate voltage required
to trigger
Parameter ST2100C..R Units Conditions
W
400 mA T
C
= 25°C, V
DRM
= 5V
4VT
C
= 25°C, V
DRM
= 5V
V
GD
DC gate voltage not to trigger 0.25 V T
C
= 125°C
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Triggering
T
J
max. Max. operating temperature 125 On-state (conducting)
T
stg
Max. storage temperature range -55 to 125
R
thJ-C
Thermal resistance, junction 0.019 DC operation single side cooled
to case 0.0095 DC operation double side cooled
R
th(C-h)
Thermal resistance, case 0.004 Single side cooled
to heatsink 0.002 Double side cooled
F Mounting force ± 10%
wt Approximate weight 1600 g
Case style (R-PUK) See Outline Table
Parameter ST2100C..R Units Conditions
Thermal and Mechanical Specification
°C
Clamping force 43KN with
mounting compound
43000
(4400)
N
(Kg)
∆R
thJ-C
Conduction
(The following table shows the increment of thermal resistence R
thJ-C
when devices operate at different conduction angles than DC)
K/W
K/W
180° 0.0010 0.0010 T
J
= T
J
max.
120° 0.0017 0.0017 K/W
60° 0.0044 0.0044
Conduction angle Single side Double side Units Conditions
