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MRF7S16150HSR5

P1-P3P4-P6P7-P9P10-P12
4
RF Device Data
Freescale Semiconductor
MRF7S16150HR3 MRF7S16150HSR3
Figure 1. MRF7S16150HR3(HSR3) Test Circuit Schematic
Z7 0.619″ x 1.330″ Microstrip
Z8 0.284″ x 0.190″ Microstrip
Z9 0.220″ x 0.250″ Microstrip
Z10 0.531″ x 0.084″ Microstrip
PCB Arlon CuClad 250GX-0300- 55 - 22, 0.030″, ε
r
= 2.55
Z1, Z5, Z11 0.744″ x 0.084″ Microstrip
Z2 0.822″ x 0.084″ Microstrip
Z3 0.252″ x 1.240″ Microstrip
Z4 0.402″ x 1.240″ Microstrip
Z6 0.111″ x 1.330″ Microstrip
V
BIAS
V
SUPPLY
RF
OUTPUT
RF
INPUT
DUT
C2 C3
C6 C7 C8
R1
Z1 Z2 Z3 Z4
C4
Z7
C10
Z6
Z5
Z9 Z10 Z11
Z8
C1
+
R2
B1
C9
+
C5
++
Table 5. MRF7S16150HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1 Small Ferrite Bead 2743019447 Fair Rite
C1 10 µF, 35 V Electrolytic Capacitor EMVY350ADA100ME55G Nippon Chemi - Con
C2, C8 0.01 µF, 50 V Chip Capacitors C1825C103J5RAC Kemit
C3, C5 10 pF Chip Capacitors ATC100B100BT500XT ATC
C4, C10 47 pF Chip Capacitors ATC100B470BT500XT ATC
C6, C7 22 µF, 35 V Tantalum Capacitors T491X226K035AT Kemet
C9 220 µF, 50 V Electrolytic Capacitor EMVY500ADA221MJ0G Nippon Chemi -Con
R1 1 KΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay
R2 10 Ω, 1/4 W Chip Resistor CRCW120610R1FKEA Vishay
MRF7S16150HR3 MRF7S16150HSR3
5
RF Device Data
Freescale Semiconductor
Figure 2. MRF7S16150HR3(HSR3) Test Circuit Component Layout
R1
B1
R2
C3
C2
C1
C4
C5
C6
C8
C7
C9
C10
CUT OUT AREA
6
RF Device Data
Freescale Semiconductor
MRF7S16150HR3 MRF7S16150HSR3
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc)
1560
f, FREQUENCY (MHz)
Figure 3. WiMAX Broadband Performance
@ P
out
= 32 Watts Avg.
−16
0
−4
−8
−12
14
24
23
22
−54
30
28
26
24
−24
−30
−36
−42
η
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
21
20
19
18
17
16
15
1580 1600 1620 1640 1660 1680 1700
22
−48
−20
IRL
G
ps
ACPR
η
D
V
DD
= 28 Vdc, P
out
= 32 W (Avg.), I
DQ
= 1500 mA,
802.16d, 64 QAM
3
/
4,
4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc)
1560
f, FREQUENCY (MHz)
Figure 4. WiMAX Broadband Performance
@ P
out
= 64 Watts Avg.
−16
0
−4
−8
−12
14
24
23
22
−45
40
38
36
34
−20
−25
−30
−35
η
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
21
20
19
18
17
16
15
1580 1600 1620 1640 1660 1680 1700
32
−40
−20
IRL
G
ps
ACPR
η
D
V
DD
= 28 Vdc, P
out
= 64 W (Avg.), I
DQ
= 1500 mA
802.16d, 64 QAM
3
/
4,
4 Bursts, 7 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF
Figure 5. Two-Tone Power Gain versus
Output Power
100
16
21
1
I
DQ
= 2250 mA
1875 mA
P
out
, OUTPUT POWER (WATTS) PEP
750 mA
1500 mA
19
18
17
10 400
G
ps
, POWER GAIN (dB)
20
1125 mA
V
DD
= 28 Vdc, I
DQ
= 1500 mA
f1 = 1625 MHz, f2 = 1635 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
Figure 6. Third Order Intermodulation Distortion
versus Output Power
0
I
DQ
= 375 mA
P
out
, OUTPUT POWER (WATTS) PEP
562.5 mA
750 mA
1500 mA
10
−20
−30
−40
100
−60
−50
1
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
400
−10
937.5 mA
V
DD
= 28 Vdc, I
DQ
= 1500 mA
f1 = 1625 MHz, f2 = 1635 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
P1-P3P4-P6P7-P9P10-P12

MRF7S16150HSR5

Mfr. #:
Buy MRF7S16150HSR5
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV7 WIMAX 1.6GHZ NI780HS
Lifecycle:
New from this manufacturer.
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