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SN7002WH6327XTSA1
P1-P3
P4-P6
P7-P8
20
11
-0
7
-1
3
Rev. 2.
5
Page 7
SN7002W
13 Typ. gate charge
V
GS
=
f
(
Q
G
); parameter:
V
DS
,
I
D
= 0.16 A pulsed,
T
j
= 25 °C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
nC
1.7
Q
G
0
2
4
6
8
10
12
V
16
SN7002W
V
GS
0.2
V
DS max
0.5
V
DS max
0.8
V
DS max
14 Drain-source breakdown voltage
V
(BR)DSS
=
f
(
T
j
)
-60
-20
20
60
100
°C
180
T
j
54
56
58
60
62
64
66
68
V
72
SN7002W
V
(BR)DSS
20
11
-
0
7
-1
3
Rev. 2.
5
Page 8
SN7002W
P1-P3
P4-P6
P7-P8
SN7002WH6327XTSA1
Mfr. #:
Buy SN7002WH6327XTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 230mA SOT-323-3
Lifecycle:
New from this manufacturer.
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SN7002WH6327XTSA1
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