DST847BPDP6-7

DST847BPDP6
Document number: DS32036 Rev. 2 - 2
4 of 9
www.diodes.com
March 2015
© Diodes Incorporated
DST847BPDP6
Electrical Characteristics Q1 NPN Transistor (@T
A
= +25°C, unless otherwise specified.)
Characteristic (Note 7)
Symbol
Min
Typical
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
50
150
-
V
I
C
= 10µA, I
B
= 0
Collector-Emitter Breakdown Voltage
BV
CES
50
150
-
V
I
C
= 10µA, I
B
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
45
65
-
V
I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
6
8.35
-
V
I
E
= 1µA, I
C
= 0
Collector-Base Cut-Off Current
I
CBO
-
-
15
nA
V
CB
= 30V
DC Current Gain
h
FE
-
200
220
300
-
470
-
I
C
= 10µA, V
CE
= 5V
I
C
= 2.0mA, V
CE
= 5V
Collector-Emitter Saturation Voltage
V
CE(sat)
-
-
50
122
125
300
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(sat)
-
-
760
880
1,000
1,100
mV
I
C
= 10mA, I
B
= 0.5mA
I
C
= 100mA, I
B
= 5.0mA
Base-Emitter Voltage
V
BE(on)
580
650
725
750
800
mV
I
C
= 2.0mA, V
CE
= 5V
I
C
= 10mA, V
CE
= 5V
Current Gain-Bandwidth Product
f
T
100
175
-
MHz
V
CE
= 5V, I
C
= 10mA,
f = 100MHz
Collector-Base Capacitance
C
cbo
-
1.5
-
pF
V
CB
= 10V, f = 1.0MHz
Note: 7. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.
DST847BPDP6
Document number: DS32036 Rev. 2 - 2
5 of 9
www.diodes.com
March 2015
© Diodes Incorporated
DST847BPDP6
Typical Characteristics Q1 NPN Transistor (@T
A
= +25°C, unless otherwise specified.)
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0 1 2 3 4 5
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
I , COLLECTOR CURRENT (A)
C
I = 2mA
B
I = 0.2mA
B
I = 0.4mA
B
I = 0.6mA
B
I = 0.8mA
B
I = 1.6mA
B
I = 1.4mA
B
I = 1.2mA
B
I = 1.8mA
B
I = 1mA
B
0
50
100
150
200
250
300
350
400
450
1 10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
h , DC CURRENT GAIN
FE
T = -55°C
A
T = 25°C
A
T = 100°C
A
T = 150°C
A
V = 5V
CE
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
1 10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V , COLLECTOR-EMITTER
SATURATION
CE(SAT)
VOLTAGE (V)
T = -55°C
A
I /I = 10
CB
T = 25°C
A
T = 100°C
A
T = 150°C
A
1 10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.01
0.1
V , COLLECTOR-EMITTER
SATURATION
CE(SAT)
VOLTAGE (V)
1
I /I = 20
CB
T = 100°C
A
T = 50°C
A
T = 20°C
A
T = 10°C
A
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.2
0.4
0.6
0.8
V , BASE-EMITTER TURN-ON VOLTAGE (V)
BE(ON)
1.0
V = 5V
CE
T = 150°C
A
T = 100°C
A
T = 25°C
A
T = -55°C
A
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1 10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
V , BASE-EMITTER SATURATION VOLTAGE (V)
BE(SAT)
T = 150°C
A
T = 100°C
A
T = 25°C
A
T = -55°C
A
DST847BPDP6
Document number: DS32036 Rev. 2 - 2
6 of 9
www.diodes.com
March 2015
© Diodes Incorporated
DST847BPDP6
Electrical Characteristics Q2 PNP Transistor (@T
A
= +25°C, unless otherwise specified.)
Characteristic (Note 7)
Symbol
Min
Typical
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-50
-100
-
V
I
C
= -10µA, I
B
= 0
Collector-Emitter Breakdown Voltage
BV
CES
-50
-90
-
V
I
C
= -10µA, I
B
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
-45
-65
-
V
I
C
= -1mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-6
-8.5
-
V
I
E
= -1µA, I
C
= 0
Collector Cut-Off Current
I
CBO
-
-
-15
nA
V
CB
= -30V
DC Current Gain
h
FE
-
200
340
330
-
470
-
I
C
= -10µA, V
CE
= -5V
I
C
= -2.0mA, V
CE
= -5V
Collector-Emitter Saturation Voltage
V
CE(sat)
-
-
-70
-300
-175
-500
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage
V
BE(sat)
-
-
-760
-885
-1,000
-1,100
mV
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5.0mA
Base-Emitter Voltage
V
BE(on)
-600
-
-670
-715
-780
-850
mV
I
C
= -2.0mA, V
CE
= -5V
I
C
= -10mA, V
CE
= -5V
Current Gain-Bandwidth Product
f
T
100
340
-
MHz
V
CE
= -5V, I
C
= -10mA,
f = 100MHz
Output Capacitance
C
obo
-
2.0
-
pF
V
CB
= -10V, f = 1.0MHz
Note: 7. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.

DST847BPDP6-7

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT BIPOLAR TRANS COMP
Lifecycle:
New from this manufacturer.
Delivery:
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