Document Number: 90414
www.vishay.com
S11-1044-Rev. C, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
Vishay Siliconix
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRLZ14S, SiHLZ14S)
• Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)
• 175 °C Operating Temperature
•Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extermely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient reliable device for use in a wide
variety of applications.
The D
2
PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and lowest possible on-resistance
in any existing surface mount package. The D
2
PAK is
suitable for high current applications because of its low
internal connection resistance and can dissipate up to 2.0 W
in a typical surface mount application.
The through-hole version (IRLZ44L, SiHLZ44L) is available
for low-profile applications.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 790 μH, R
g
= 25 , I
AS
= 10 A (see fig. 12).
c. I
SD
10 A, dI/dt 90 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
e. Uses IRLZ14, SiHLZ14 data and test conditions.
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
()V
GS
= 5 V 0.20
Q
g
(Max.) (nC) 8.4
Q
gs
(nC) 3.5
Q
gd
(nC) 6.0
Configuration Single
N-Channel MOSFET
G
D
S
D
2
PAK (TO-263)
G
D
S
I
2
PAK (TO-262)
G
D
S
ORDERING INFORMATION
Package D
2
PAK (TO-263) D
2
PAK (TO-263) D
2
PAK (TO-263) I
2
PAK (TO-262)
Lead (Pb)-free and Halogen-free SiHLZ14S-GE3 SiHLZ14STRL-GE3
a
SiHLZ14STRR-GE3
a
-
Lead (Pb)-free
IRLZ14SPbF - IRLZ14STRRPbF
a
IRLZ14LPbF
SiHLZ14S-E3 - SiHLZ14STR-E3 SiHLZ14L-E3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
e
V
DS
60
V
Gate-Source Voltage V
GS
± 10
Continuous Drain Current V
GS
at 5 V
T
C
= 25 °C
I
D
10
AT
C
= 100 °C 7.2
Pulsed Drain Current
a, e
I
DM
40
Linear Derating Factor 0.29 W/°C
Single Pulse Avalanche Energy
b, e
E
AS
68 mJ
Maximum Power Dissipation
T
C
= 25 °C
P
D
43
W
T
A
= 25 °C 3.7
Peak Diode Recovery dV/dt
c, e
dV/dt 4.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
* Pb containing terminations are not RoHS compliant, exemptions may apply
