VS-8EWS08S-M3, VS-8EWS12S-M3
www.vishay.com
Vishay Semiconductors
Revision: 19-Jan-17
2
Document Number: 93383
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 105 °C, 180° conduction half sine wave 8
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 125
10 ms sine pulse, no voltage reapplied 150
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 78
A
2
s
10 ms sine pulse, no voltage reapplied 110
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 1100 A
2
s
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
8 A, T
J
= 25 °C 1.1 V
Forward slope resistance r
t
T
J
= 150 °C
20 m
Threshold voltage V
F(TO)
0.82 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.05
mA
T
J
= 150 °C 0.50
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-55 to +150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 2.5
°C/W
Typical thermal resistance,
junction to ambient (PCB mount)
R
thJA
(1)
62
Approximate weight
1g
0.03 oz.
Marking device Case style TO-252AA (D-PAK)
8EWS08S
8EWS12S
