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NTS12120EMFST1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 1
1 Publication Order Number:
NTS12120EMFS/D
NTS12120EMFS,
NRVTS12120EMFS
Very Low Leakage
Trench-based Schottky
Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• LED Lighting
• Instrumentation
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
TRENCH SCHOTTKY
RECTIFIERS
12 AMPERES
120 VOLTS
http://onsemi.com
1,2,3
5,6
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
TE1212 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
MARKING
DIAGRAM
TE1212
AYWWZZ
A
A
A
Not Used
C
C
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device Package Shipping†
ORDERING INFORMATION
NTS12120EMFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTS12120EMFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVTS12120EMFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVTS12120EMFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NTS12120EMFS, NRVTS12120EMFS
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
120
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 165°C)
I
F(AV)
12 A
Peak Repetitive Forward Current,
(Rated V
R
, Square Wave, 20 kHz, T
C
= 163°C)
I
FRM
24 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
200 A
Storage Temperature Range T
stg
−65 to +175 °C
Operating Junction Temperature T
J
−55 to +175 °C
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) E
AS
100 mJ
ESD Rating (Human Body Model) 3B
ESD Rating (Machine Model) M4
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm
2
1 oz. copper bond pad, on a FR4 board)
R
θ
JC
2.0 − °C/W
ELECTRICAL CHARACTERISTICS
Rating Symbol Typ Max Unit
Instantaneous Forward Voltage (Note 1)
(I
F
= 6 A, T
J
= 25°C)
(I
F
= 12 A, T
J
= 25°C)
(I
F
= 6 A, T
J
= 125°C)
(I
F
= 12 A, T
J
= 125°C)
V
F
0.6
0.735
0.515
0.588
−
0.83
−
0.69
V
Instantaneous Reverse Current (Note 1)
(V
R
= 90 V, T
J
= 25°C)
(Rated dc Voltage, T
J
= 25°C)
(V
R
= 90 V, T
J
= 125°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
1.73
3.75
2.4
3.87
−
55
−
30
mA
mA
mA
mA
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
NTS12120EMFS, NRVTS12120EMFS
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.90.70.40.30.20.10
0.1
1
10
100
0.70.50.40.30.20.10
0.1
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V) V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
1009070504030100
1.E−07
1008070605020100
1.E−07
Figure 5. Typical Junction Capacitance Figure 6. Current Derating
V
R
, REVERSE VOLTAGE (V) T
C
, CASE TEMPERATURE (°C)
1001010.1
10
100
1000
10,000
140130120 1701101009080
0
5
10
15
20
25
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
I
R
, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
0.5 0.6 0.8 0.6 0.90.8
20 60 80 110 120
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
I
R
, INSTANTANEOUS REVERSE CURRENT (A)
30 40 90 120110
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
T
A
= 125°C
T
A
= 150°C
T
A
= −55°C
T
A
= 25°C
T
A
= 125°C
T
A
= 150°C
T
A
= −55°C
T
A
= 25°C
T
A
= 125°C
T
A
= 150°C
T
A
= 25°C
T
A
= 125°C
T
A
= 150°C
T
A
= 25°C
T
J
= 25°C
Square Wave
DC
R
q
JC
= 2.0 °C/W
T
A
= 175°C
T
A
= 175°C
T
A
= 175°C
1.E−06
T
A
= 175°C
1.E−05
1.E−06
150 160
P1-P3P4-P5

NTS12120EMFST1G

Mfr. #:
Buy NTS12120EMFST1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 12A 120V LOW LEAKAGE TRE
Lifecycle:
New from this manufacturer.
Delivery:
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