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PMD5002K,115

P1-P3P4-P6P7-P9P10-P12P13-P15
PMD5002K_1 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 6 November 2006 7 of 15
NXP Semiconductors
PMD5002K
MOSFET driver
7. Characteristics
[1] Pulse test: t
p
≤ 300 µs; δ≤0.02.
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
PNP transistor
I
CBO
collector-base cut-off
current
V
CB
= −40 V; I
E
=0A - - −10 nA
V
CB
= −40 V; I
E
=0A;
T
j
= 150 °C
--−10 µA
h
FE
DC current gain V
CE
= −5 V; I
C
= −1 mA 100 180 -
V
CE
= −5 V; I
C
= −200 mA 100 125 -
V
CE
= −5 V; I
C
= −500 mA
[1]
50 80 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −200 mA; I
B
= −20 mA - −130 −250 mV
I
C
= −500 mA; I
B
= −50 mA
[1]
- −280 −500 mV
V
BEsat
base-emitter saturation
voltage
I
C
= −200 mA; I
B
= −20 mA - −0.86 −1V
I
C
= −500 mA; I
B
= −50 mA
[1]
- −0.97 −1.1 V
V
BE
base-emitter voltage V
CE
= −5 V; I
C
= −300 mA - −830 - mV
Diode
V
F
forward voltage I
F
= 200 mA
[1]
- - 1.1 V
Device
t
d
delay time I
C
= −0.15 A; I
B
= −5mA - 7 - ns
t
r
rise time - 34 - ns
t
on
turn-on time - 41 - ns
t
s
storage time - 610 - ns
t
f
fall time - 172 - ns
t
off
turn-off time - 782 - ns
Device with optional capacitor C1
t
d
delay time I
C
= −0.15 A; I
B
= −5 mA;
C1=1nF
-4-ns
t
r
rise time - 3 - ns
t
on
turn-on time - 7 - ns
t
s
storage time - 40 - ns
t
f
fall time - 43 - ns
t
off
turn-off time - 83 - ns
PMD5002K_1 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 6 November 2006 8 of 15
NXP Semiconductors
PMD5002K
MOSFET driver
V
CE
= −5V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
(4) T
amb
= 125 °C
(5) T
amb
= 150 °C
T
amb
=25°C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
V
CE
= −5V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
Fig 8. Base-emitter saturation voltage as a function of
collector current; typical values
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200
100
300
400
h
FE
0
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
(2)
(1)
(3) (4) (5)
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V
CE
(V)
0 −5−4−2 −3−1
−0.4
−0.6
−0.2
−0.8
−1.0
I
C
(A)
0
I
B
(mA) = −50
−45
−40
−35
−30
−25
−20
−15
−10
−5
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−0.7
−0.5
−0.9
−1.1
V
BE
(V)
−0.3
I
C
(mA)
−10
−2
−10
3
−10
2
−10
−1
−10−1
(2)
(1)
(3)
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−0.6
−0.8
−0.4
−1.0
−1.2
V
BEsat
(V)
−0.2
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
(2)
(1)
(3)
PMD5002K_1 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 6 November 2006 9 of 15
NXP Semiconductors
PMD5002K
MOSFET driver
8. Test information
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa901
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
−10
−1
−1
V
CEsat
(V)
−10
−2
(2)
(1)
(3)
006aaa902
I
C
(mA)
−10
−1
−10
3
−10
2
−1 −10
−10
−1
−1
V
CEsat
(V)
−10
−2
(2)
(1)
(3)
I
C
= −0.15 A; I
B
= −5 mA; R1 = 50 Ω; R2 = 1 kΩ; R
C
=68Ω; C1 = 1 nF
Fig 11. Test circuit for switching times
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3 kΩ
DUT
V
CC
V
I
V
O
D1
R2
R1
C1
TR1
R
C
oscilloscope
450 Ω
(probe)
(probe)
oscilloscope
P1-P3P4-P6P7-P9P10-P12P13-P15

PMD5002K,115

Mfr. #:
Buy PMD5002K,115
Manufacturer:
NXP Semiconductors
Description:
IC MOSFET DRIVER SC-59A
Lifecycle:
New from this manufacturer.
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