2004 Feb 17 3
NXP Semiconductors Product specification
Silicon PIN diode BAP1321-03
CHARACTERISTICS
T
j
= 25C unless otherwise specified.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
forward voltage I
F
= 50 mA 0.95 1.1 V
I
R
reverse leakage current V
R
=60V 100 nA
C
d
diode capacitance V
R
=0; f=1MHz 0.4 pF
V
R
= 1 V; f = 1 MHz 0.35 0.45 pF
V
R
= 20 V; f = 1 MHz 0.25 0.32 pF
r
D
diode forward resistance f = 100 MHz; note 1
I
F
= 0.5 mA 3.4 5.0
I
F
=1mA 2.4 3.6
I
F
=10mA 1.2 1.8
I
F
= 100 mA 0.85 1.3
s
21
2
isolation V
R
= 0; f = 900 MHz 16.6 dB
V
R
= 0; f = 1800 MHz 11.6 dB
V
R
= 0; f = 2450 MHz 9.2 dB
s
21
2
insertion loss I
F
= 0.5 mA; f = 900 MHz 0.26 dB
I
F
= 0.5 mA; f = 1800 MHz 0.35 dB
I
F
= 0.5 mA; f = 2450 MHz 0.44 dB
s
21
2
insertion loss I
F
= 1 mA; f = 900 MHz 0.20 dB
I
F
= 1 mA; f = 1800 MHz 0.29 dB
I
F
= 1 mA; f = 2450 MHz 0.38 dB
s
21
2
insertion loss I
F
=10mA; f=900MHz 0.13 dB
I
F
= 10 mA; f = 1800 MHz 0.22 dB
I
F
= 10 mA; f = 2450 MHz 0.32 dB
s
21
2
insertion loss I
F
= 100 mA; f = 900 MHz 0.10 dB
I
F
= 100 mA; f = 1800 MHz 0.20 dB
I
F
= 100 mA; f = 2450 MHz 0.29 dB
L
charge carrier life time when switched from I
F
=10mA to I
R
=6mA;
R
L
= 100 ; measured at I
R
=3mA
0.5 s
L
S
series inductance I
F
= 100 mA; f = 100 MHz 1.5 nH
SYMBOL PARAMETER VALUE UNIT
R
th(j-s)
thermal resistance from junction to soldering point 120 K/W
