KSA709GBU

©2004 Fairchild Semiconductor Corporation Rev. B1, April 2004

KSA709

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25°C unless otherwise noted

Electrical Characteristics

T

a

=25°C unless otherwise noted

* Pulse Test: PW≤350µs, Duty cycle≤2%

h

FE

Classification

Symbol Parameter Ratings Units

V

CBO

Collector-Base Voltage -160 V

V

CEO

Collector-Emitter Voltage -150 V

V

EBO

Emitter-Base Voltage -8 V

I

C

Collector Current -700 mA

P

C

Collector Power Dissipation 800 mW

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

= -100µA, I

E

=0 -160 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= -10mA, I

B

=0 -150 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

= -100µA, I

C

=0 -8 V

I

CBO

Collector Cut-off Current V

CB

= -100V, I

E

=0 -0.1 µA

I

EBO

Emitter Cut-off Current V

EB

= -5V, I

C

=0 -0.1 µA

h

FE

* DC Current Gain V

CE

= -2V, I

C

= -50mA 70 400

V

CE

(sat) * Collector-Emitter Saturation Voltage I

C

= -200mA, I

B

= -20mA -0.3 -0.4 V

V

BE

(sat) * Base-Emitter Saturation Voltage I

C

= -200mA, I

B

= -20mA -0.9 -1.0 V

f

T

Current Gain Bandwidth Product V

CE

= -10V, I

C

= -50mA 50 MHz

C

ob

Output Capacitance V

CB

= -10V, I

E

=0, f=1MHz 10 pF

Classification O Y G

h

FE

70 ~ 140 120 ~ 240 200 ~ 400

KSA709

High Voltage Amplifier

• Collector-Base Voltage : V

CBO

= -160V

• Collector Power Dissipation : P

C

=800mW

• Complement to KSC1009

• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

1. Emitter 2. Base 3. Collector

TO-92

1

©2004 Fairchild Semiconductor Corporation

KSA709

Rev. B1, April 2004

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

Figure 5. Collector Output Capacitance

0-2-4-6-8-10

0

-20

-40

-60

-80

-100

I

B

= -0.8mA

I

B

= -0.6mA

I

B

= -0.4mA

I

B

= -0.2mA

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

-0.1 -1 -10 -100

1

10

100

1000

V

CE

= -5V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

-1 -10 -100 -1000

-0.01

-0.1

-1

-10

V

CE(sat)

V

BE(sat)

I

C

= 10 I

B

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

-1

-10

-100

-1000

V

CE

= -1V

I

C

[mA], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

-1 -10 -100

1

10

100

I

E

= 0

f = 1MHz

C

ob

[pF], CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

0.46

±0.10

1.27TYP

(R2.29)

3.86MAX

[1.27

±0.20

]

1.27TYP

[1.27

±0.20

]

3.60

±0.20

14.47

±0.40

1.02

±0.10

(0.25)

4.58

±0.20

4.58

+0.25

–0.15

0.38

+0.10

–0.05

0.38

+0.10

–0.05

TO-92

Package Dimensions

KSA709

Dimensions in Millimeters

©2004 Fairchild Semiconductor Corporation Rev. B1, April 2004

KSA709GBU

Mfr. #:

Manufacturer:

ON Semiconductor

Description:

TRANS PNP 150V 0.7A TO-92

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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