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STN1NF10

P1-P3P4-P6P7-P9P10-P12
Electrical characteristics STN1NF10
4/12
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250 µA, V
GS
= 0
100 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating @125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
± 100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
23 4V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 0.5A
0.7 0.8 Ω
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance V
DS
= 15A, I
D
= 1A 1 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
105
20
9
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=50V, I
D
= 1A
V
GS
=10V
4
1
1.5
6nC
nC
nC
Table 5. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 50V, I
D
= 0.5A,
R
G
= 4.7Ω, V
GS
= 10V
(see Figure 13)
4
5.5
ns
ns
t
d(off)
t
f
Turn-off-delay time
Fall time
V
DD
= 50V, I
D
= 0.5A,
R
G
= 4.7Ω, V
GS
= 10V
(see Figure 13)
13
6.5
ns
ns
STN1NF10 Electrical characteristics
5/12
Table 6. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max Unit
I
SD
Source-drain current 1 A
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) 4 A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
I
SD
=1A, V
GS
=0
1.2 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=1A,
di/dt = 100A/µs,
V
DD
=20V, Tj=150°C
(see Figure 15)
45
60
2.7
ns
nC
A
Electrical characteristics STN1NF10
6/12
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area Figure 2. Thermal impedance
Figure 3. Output characteristics Figure 4. Transfer characteristics
Figure 5. Transconductance Figure 6. Static drain-source on resistance
P1-P3P4-P6P7-P9P10-P12

STN1NF10

Mfr. #:
Buy STN1NF10
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 100 Volt 1 Amp
Lifecycle:
New from this manufacturer.
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