BAT20JFILM Datasheet BAT20JFILM | P1-P3

1/5

BAT20J

April 2004 - Ed: 1

HIGH EFFICIENCY SWITCHING AND

ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE

■

Low conduction losses

■

Very low reverse current

■

Negligible switching losses

■

Low capacitance diode

■

Low forward and reverse recovery times

■

Extremely fast switching

■

Surface mount device

FEATURES AND BENEFITS

The BAT20J is using 23V schottky barrier diode

encapsulated on a SOD-323 package. This is spe-

cially suited for switching mode in mobile phone

and PDA power management applications or LED

driver circuits (step up converters).

DESCRIPTION

SOD-323

Symbol Parameter Value Unit

RRM

Repetitive peak reverse voltage 23 V

F(RMS)

Repetitive peak forward current 2 A

F(AV)

Average forward current δ = 0.38 1 A

FSM

Surge non repetitive forward current (t

=10ms sinusoidal) 5 A

stg

Maximum storage temperature range - 65 to +150 °C

Tj Maximum operating junction temperature * 150 °C

TL Maximum temperature for soldering during * 260 °C

ABSOLUTE RATINGS (limiting values)

dPtot

dTj Rth j a

−

()

thermal runaway condition for a diode on its own heatsink

F(AV)

RRM

23 V

25°C(max) @ 15V 12 µA

Tj (max) 150 °C

MAIN PRODUCT CHARACTERISTICS

Part Number Marking

BAT20JFILM 20

Order code

BAT20J

2/4

Symbol Parameter Value Unit

th (j-a)

Junction to Ambient (*) 600 °C/W

(*) Mounted on epoxy board without copper heat sink.

THERMAL RESISTANCE

Symbol Parameters Tests conditions Min. Typ. Max. Unit

* Reverse leakage current

(see note 1)

Tj = 25°C V

=5V

=8V

=15V

0.65

0.88

3.00

µA

* Reverse leakage current Tj = 85°C V

=5V

=8V

=15V

120

150

250

** Forward voltage drop Tj = 25°C I

=10mA

= 100 mA

=1A

0.28

0.35

0.54

0.31

0.40

0.62

* Pulse test tp = 380 µs, δ <2%

** Pulse test tp = 5 ms, δ <2%

Note 1: I

at 23 V and Tj = 25°C is equal to 60 µA typ.

STATIC ELECTRICAL CHARACTERISTICS

Symbol Parameters Tests conditions Min. Typ. Max. Unit

Diode capacitance V

=5V F=1MHz 20 30 pF

To evaluate the maximum conduction losses, use the following equations :

P = 0.32 x I

F(AV)

+ 0.23 x I

(RMS)

DYNAMIC ELECTRICAL CHARACTERISTICS

BAT20J

3/5

I(A)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0 25 50 75 100 125 150

T (°C)

amb

=tp/T

Printed circuit board FR4

S =2.25mm

Fig. 1: Peak forward current versus ambient

temperature (δ = 0.11).

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0 25 50 75 100 125 150

I(A)

F(AV)

=tp/T

T (°C)

amb

Printed circuit board FR4

S =2.25mm

Fig. 2: Average forward current versus ambient

temperature ( δ = 0.5).

1.E-03

1.E-02

1.E-01

1.E+00

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

Z/R

th(j-a) th(j-a)

t(s)

Single pulse

S =2.25mm

Fig. 3: Relative variation of thermal impedance

junction to ambient versus pulse duration .

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

0 25 50 75 100 125 150

I(T

Rj Rj

) / =25°CI(T )

T (°C)

V =5V

Fig. 5: Relative variation of reverse leakage

currrent versus junction temperature (typical

values).

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

0 2 4 6 8 1012141618202224

I (µA)

V (V)

T =25°C

T =85°C

T =150°C

Fig. 4: Reverse leakage currrent versus reverse

voltage applied (typical values).

100

1 10 100

C(pF)

V (V)

F=1MHz

V =30mV

T =25°C

OSC RMS

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values).

P1-P3 P4-P5

BAT20JFILM

Mfr. #:

Buy BAT20JFILM

Manufacturer:

STMicroelectronics

Description:

Schottky Diodes & Rectifiers RECTIFIER

Lifecycle:

New from this manufacturer.

Delivery:

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BAT20JFILM