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ZEN056V130A24LS

P1-P3P4-P6P7-P8
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT: ZEN056V130A24LS
DOCUMENT: SCD26730
REV LETTER: F
REV DATE: MAY 12, 2011
PAGE NO.: 1 OF 8
Specification Status: Released
GENERAL DESCRIPTION
TE PolyZen devices are polymer
enhanced, precision Zener diode micro-
assemblies. They offer resettable
protection against multi-Watt fault events
without the need for multi-Watt heat sinks.
The Zener diode used for voltage
clamping in a PolyZen micro-assembly
was selected due to its relatively flat
voltage vs current response. This helps improve output
voltage clamping, even when input voltage is high and diode
currents are large.
An advanced feature of the PolyZen micro-assembly is that
the Zener diode is thermally coupled to a resistively non-
linear, polymer PTC (positive temperature coefficient) layer.
This PTC layer is fully integrated into the device, and is
electrically in series between V
IN
and the diode clamped V
OUT
.
This advanced PTC layer responds to either extended diode
heating or overcurrent events by transitioning from a low to
high resistance state, also known as ”tripping”. A tripped PTC
will limit current and generate voltage drop. It helps to protect
both the Zener diode and the follow on electronics and
effectively increases the diode’s power handling capability.
The polymer enhanced Zener diode helps protect sensitive
portable electronics from damage caused by inductive
voltage spikes, voltage transients, incorrect power supplies
and reverse bias. These devices are particularly suitable for
portable electronics and other low-power DC devices.
BENEFITS
• Stable Zener diode helps shield downstream
electronics from overvoltage and reverse bias
• Trip events shut out overvoltage and reverse
bias sources
• Analog nature of trip events minimizes
upstream inductive spikes
• Minimal power dissipation requirements
• Single component placement
FEATURES
• Overvoltage transient suppression
• Stable V
Z
vs fault current
• Time delayed, overvoltage trip
• Time delayed, reverse bias trip
• Multi-Watt power handling capability
• Integrated device construction
• RoHS Compliant
TARGET APPLICATIONS
• DC power port protection in portable
electronics
• DC power port protection for systems using
barrel jacks for power input
• Internal overvoltage & transient suppression
• DC output voltage regulation
TYPICAL APPLICATION BLOCK DIAGRAM
GND
V
IN
V
OUT
Regulated
Output
R
Load
Protected downstream
electronics
1
2
3
+
Power Supply
(External or Internal)
PolyZen Protected Electronics
PolyZen
Device
GND
V
IN
V
OUT
Regulated
Output
R
Load
Protected downstream
electronics
1
2
3
+
Power Supply
(External or Internal)
PolyZen Protected Electronics
GND
V
IN
V
OUT
Regulated
Output
R
Load
Protected downstream
electronics
1
2
3
+
Power Supply
(External or Internal)
PolyZen Protected Electronics
PolyZen
Device
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT: ZEN056V130A24LS
DOCUMENT: SCD26730
REV LETTER: F
REV DATE: MAY 12, 2011
PAGE NO.: 2 OF 8
CONFIGURATION INFORMATION
Pin Configuration (Top View) Recommended Pad Dimensions
2
3
V
IN
GND
V
OUT
1
PIN DESCRIPTION
Pin Number Pin Name Pin Function
1 V
IN
V
IN
. Protected input to Zener diode.
2 GND
GND
3 V
OUT
V
OUT
. Zener regulated voltage output
BLOCK DIAGRAM
DEFINITION of TERMS
I
PTC
Current flowing through the PTC portion of the
circuit
I
FLT
RMS fault current flowing through the diode
I
OUT
Current flowing out the V
OUT
pin of the device
Trip Event A condition where the PTC transitions to a high
resistance state, thereby significantly limiting I
PTC
and related currents, and significantly increasing
the voltage drop between V
IN
and V
OUT
.
Trip
Endurance
Time the PTC portion of the device remains both
powered and in a tripped state.
2.21 mm
(0.087”)
0.94 mm
(0.037”)
0.33 mm
(0.013”)
0.56 mm
(0.022”)
2.88 mm
(0.1135”)
0.56 mm
(0.022”)
0.94 mm
(0.037”)
2.21 mm
(0.087”)
0.94 mm
(0.037”)
0.33 mm
(0.013”)
0.56 mm
(0.022”)
2.88 mm
(0.1135”)
0.56 mm
(0.022”)
0.94 mm
(0.037”)
GND
V
IN
V
OUT
Zener
Diode
Polymer PTC
GND
V
IN
V
OUT
Zener
Diode
Polymer PTC
GND
I
FLT
V
IN
I
OUT
I
PTC
V
OUT
GND
I
FLT
V
IN
I
OUT
I
PTC
V
OUT
PolyZen
Polymer Enhanced Zener Diode
Micro-Assemblies
PRODUCT: ZEN056V130A24LS
DOCUMENT: SCD26730
REV LETTER: F
REV DATE: MAY 12, 2011
PAGE NO.: 3 OF 8
GENERAL SPECIFICATIONS
Operating Temperature -40º to +85ºC
Storage Temperature -40º to +85ºC
ELECTRICAL CHARACTERISTICS
1-3, 11
(Typical unless otherwise specified)
V
Int
Max
8
(V)
I
FLT
Max
9
Tripped Power
Dissipation
10
Max
V
Z
4
(V)
Leakage Current
Min Typ Max
I
zt
4
(A)
I
HOLD
5
@
20ºC
(A)
Test
Voltage
Max
Current
(mA)
R Typ
6
(Ohms)
R
1Max
7
(Ohms)
V
INT
Max
(V)
Test
Current
(A)
I
FLT
Max
(A)
Test
Voltage
(V)
Value
(W)
Test
Voltage
(V)
5.45 5.6 5.75 0.1 1.3 5.25 10 0.12 0.16 24V 3A
+10
-40
+24
-16V
1.0 24
Note 1: Electrical characteristics determined at 25ºC unless otherwise specified.
Note 2: This device is intended for limited fault protection. Repeated trip events or extended trip endurance can degrade the device
and may affect performance to specifications. Performance impact will depend on multiple factors including, but not limited to,
voltage, trip current, trip duration, trip cycles, and circuit design. For details or ratings specific to your application contact TE
Connectivity Circuit Protection directly.
Note 3: Specifications developed using 1.0 ounce 0.045” wide copper traces on dedicated FR4 test boards. Performance in your
application may vary.
Note 4: I
zt
is the current at which V
z
is measured (V
Z
= V
OUT
). Additional V
Z
values are available on request.
Note 5: I
HOLD
: Maximum steady state I
PTC
(current entering or exiting the V
IN
pin of the device) that will not generate a trip event at the
specified temperature. Specification assumes I
FLT
(current flowing through the Zener diode) is sufficiently low so as to prevent
the diode from acting as a heat source. Testing is conducted with an “open” Zener.
Note 6: R Typ: Resistance between V
IN
and V
OUT
pins during normal operation at room temperature.
Note 7: R
1Max
: The maximum resistance between V
IN
and V
OUT
pins at room temperature, one hour after 1
st
trip or after reflow
soldering.
Note 8: V
INT
Max: V
INT
Max relates to the voltage across the PPTC portion of the PolyZen device (V
IN
-V
OUT
). V
INT
Max is defined as
the voltage (V
IN
-V
OUT
) at which typical qualification devices (98% devices, 95% confidence) survived at least 100 trip cycles
and 24hours trip endurance at the specified voltage (V
IN
-V
OUT
) and current (I
PTC
). V
INT
Max testing is conducted using a
"shorted" load (V
OUT
= 0V). V
INT
Max is a survivability rating, not a performance rating.
Note 9: I
FLT
Max: I
FLT
Max relates to the stead state current flowing through the diode portion of the PolyZen device in a fault
condition, prior to a trip event. I
FLT
Max is defined as the current at which typical qualification devices (12 parts per lot from 3
lots) survived 100 test cycles. RMS fault currents above I
FLT
Max may permanently damage the diode portion of the PolyZen
device. Testing is conducted with NO load connected to V
OUT
, such that I
OUT
= 0. “Test voltage” is defined as the voltage
between V
IN
to GND and includes the PolyZen Diode drop. Specification is dependent on the direction of current flow through
the diode. I
FLT
Max is a survivability rating, not a performance rating.
Note 10: The power dissipated by the device when in the “tripped” state, as measured on TE test boards (see note 3).
Note 11: Specifications based on limited qualification data and subject to change.
MECHANICAL DIMENSIONS
Min Typical Max
Length L
3.85 mm
(0.152”)
4 mm
(0.16”)
4.15 mm
(0.163")
Width W
3.85 mm
(0.152”)
4 mm
(0.16”)
4.15 mm
(0.163")
Height H
1.4mm
(0.055”)
1.7 mm
(0.067”)
2.0 mm
(0.081”)
Length
Diode
Ld -
3.0 mm
(0.118”)
-
Height
Diode
Hd -
1.0 mm
(0.039”)
-
Offset O1 -
0.6 mm
(0.024”)
-
Offset O2 -
0.7 mm
(0.028”)
-
P1-P3P4-P6P7-P8

ZEN056V130A24LS

Mfr. #:
Buy ZEN056V130A24LS
Manufacturer:
Littelfuse
Description:
Zener Diodes 5.6V .12W 1.3A LS SMD PolyZen DEVICES
Lifecycle:
New from this manufacturer.
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