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V10PL45-M3/86A

P1-P3P4-P5
V10PL45-M3
www.vishay.com
Vishay General Semiconductor
Revision: 09-Dec-13
1
Document Number: 89479
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Current Density Surface Mount
Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.28 V at I
F
= 5 A
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency DC/DC converters,
freewheeling, and polarity protection applications.
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Notes
(1)
Mounted on 30 mm x 30 mm pad areas aluminum PCB
(2)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
RRM
45 V
I
FSM
200 A
V
F
at I
F
= 10 A 0.35 V
T
J
max. 150 °C
Package TO-277A (SMPC)
Diode variation Single die
K
2
1
TO-277A (SMPC)
TMBS
®
eSMP
®
Series
Anode 1
Anode 2Cathode
K
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V10PL45 UNIT
Device marking code V10L45
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum DC forward current
I
F
(1)
10
A
I
F
(2)
6.0
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
200
Operating junction and storage temperature range (AC mode) T
J
, T
STG
-40 to +150 °C
V10PL45-M3
www.vishay.com
Vishay General Semiconductor
Revision: 09-Dec-13
2
Document Number: 89479
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Notes
(1)
Free air, mounted on recommended copper pad area; thermal resistance R
JA
- junction to ambient
(2)
Mounted on 30 mm x 30 mm aluminum PCB; thermal resistance R
JM
- junction to mount
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Notes
(1)
Mounted on 30 mm x 30 mm aluminum PCB; T
M
measured
at the terminal of cathode band (R
JM
= 4 °C/W)
(2)
Free air, mounted on recommended copper pad area
(R
JA
= 68 °C/W)
Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 5.0 A
T
A
= 25 °C
V
F
(1)
0.39 -
V
I
F
= 10 A 0.44 0.52
I
F
= 5.0 A
T
A
= 125 °C
0.28 -
I
F
= 10 A 0.35 0.43
Reverse current V
R
= 45 V
T
A
= 25 °C
I
R
(2)
-5.0
mA
T
A
= 125 °C 30 75
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V10PL45 UNIT
Typical thermal resistance
R
JA
(1)
68
°C/W
R
JM
(2)
4
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V10PL45-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel
V10PL45-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel
0
2
4
6
8
10
12
0 25 50 75 100 125 150 175
Average Forward Rectied Current (A)
T
M
- Mount Temperature (°C)
T
A
= 25 °C
T
M
= 130 °C
0.0
1.0
2.0
3.0
4.0
5.0
024681012
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
V10PL45-M3
www.vishay.com
Vishay General Semiconductor
Revision: 09-Dec-13
3
Document Number: 89479
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150 °C
T
A
= 25 °C
T
= 100 °C
T
A
= 125 °C
0.001
0.01
0.1
1
10
100
1000
20 40 60 80 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
si
g
= 50 mV
p
-
p
t - Pulse Duration (s)
100
1
0.01 10 100
Transient Thermal Impedance (°C/W)
0.1 1
10
Junction to Ambient
P1-P3P4-P5

V10PL45-M3/86A

Mfr. #:
Buy V10PL45-M3/86A
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 10A 45V TrenchMOS
Lifecycle:
New from this manufacturer.
Delivery:
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