IRGIB6B60KD
2 www.irf.com
Vcc =80% (V
CES
), V
GE
= 20V, L =100µH, R
G
= 50Ω.
Energy losses include "tail" and diode reverse recovery.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig.
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 — — V
V
GE
= 0V, I
C
= 500µA
∆
V
(BR)CES
∆
T
J
Temperature Coeff. of Breakdown Volta
e —0.30—V/°C
V
GE
= 0V, I
C
= 1mA (25°C-150°C)
V
CE(on)
Collector-to-Emitter Voltage 1.50 1.80 2.20 V
I
C
= 5A, V
GE
= 15V, T
J
= 25°C
5,6,7
—2.202.50
I
C
= 5A, V
GE
= 15V, T
J
= 150°C
—2.302.60
I
C
= 5A, V
GE
= 15V, T
J
= 175°C
9,10,11
V
GE(th)
Gate Threshold Voltage 3.5 4.5 5.5 V
V
CE
= V
GE
, I
C
= 250µA
9,10,11
∆
V
GE(th)
∆
T
J
Threshold Voltage temp. coefficient — -10 — mV/°
V
CE
= V
GE
, I
C
= 1mA (25°C-150°C)
12
gfe Forward Transconductance — 3.0 — S
V
CE
= 50V, I
C
= 5.0A, PW = 80µs
I
CES
Zero Gate Voltage Collector Current — 1.0 150 µA
V
GE
= 0V, V
CE
= 600V
—200500
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
— 720 1100
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
V
FM
Diode Forward Voltage Drop — 1.25 1.45 V
I
F
= 5.0A, V
GE
= 0V
8
—1.201.40
I
F
= 5.0A, V
GE
= 0V, T
J
= 150°C
—1.151.35
I
F
= 5.0A, V
GE
= 0V, T
J
= 175°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA
V
GE
= ±20V, V
CE
= 0V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Ref.Fig.
Q
g
Total Gate Charge (turn-on) — 18.2 27.3
I
C
= 5.0A
23
Q
ge
Gate-to-Emitter Charge (turn-on) — 1.9 2.85 nC
V
CC
= 400V
CT1
Q
gc
Gate-to-Collector Charge (turn-on) — 9.2 13.8
V
GE
= 15V
E
on
Turn-On Switching Loss — 110 210
I
C
= 5.0A, V
CC
= 400V
CT4
E
off
Turn-Off Switching Loss — 135 245 µJ
V
GE
= 15V, R
G
= 100Ω, L = 1.4mH
E
tot
Total Switching Loss — 245 455
Ls= 150nH, T
J
= 25°C
t
d(on)
Turn-On delay time — 25 34
I
C
= 5.0A, V
CC
= 400V
t
r
Rise time — 17 26 ns
V
GE
= 15V, R
G
= 100
Ω
, L = 1.4mH
CT4
t
d(off)
Turn-Off delay time — 215 230
Ls= 150nH, T
J
= 25°C
t
f
Fall time — 13.2 22
E
on
Turn-On Switching Loss — 150 260
I
C
= 5.0A, V
CC
= 400V
CT4
E
off
Turn-Off Switching Loss — 190 300 µJ
V
GE
= 15V, R
G
= 100Ω, L = 1.4mH
13,15
E
tot
Total Switching Loss — 340 560
Ls= 150nH, T
J
= 150°C
WF1,WF2
t
d(on)
Turn-On delay time — 28 37
I
C
= 5.0A, V
CC
= 400V
14,16
t
r
Rise time — 17 26 ns
V
GE
= 15V, R
G
= 100
Ω
, L = 1.4mH
CT4
t
d(off)
Turn-Off delay time — 240 255
Ls= 150nH, T
J
= 150°C
WF1
t
f
Fall time — 18 27 WF2
L
E
Internal Emitter Inductance — 7.5 — nH Measured 5 mm from package
C
ies
Input Capacitance — 290 435
V
GE
= 0V
C
oes
Output Capacitance — 34 51 pF
V
CC
= 30V
22
C
res
Reverse Transfer Capacitance — 10 15 f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area FULL SQUARE
T
J
= 150°C, I
C
= 18A, Vp = 600V
4
V
CC
=500V,V
GE
= +15V to 0V,R
G
= 100
Ω
CT2
SCSOA Short Circuit Safe Operating Area 10 — — µs
T
J
= 150°C, Vp = 600V, R
G
= 100Ω
CT3
V
CC
=360V,V
GE
= +15V to 0V
WF4
I
SC (PEAK)
Peak Short Circuit Collector Current — 50 — A WF4
E
rec
Reverse Recovery Energy of the Diode — 90 175 µJ
T
J
= 150°C
17,18,19
t
rr
Diode Reverse Recovery Time — 70 91 ns
V
CC
= 400V, I
F
= 5.0A, L = 1.4mH 20,21
I
rr
Peak Reverse Recovery Current — 10 13 A
V
GE
= 15V, R
G
= 100Ω, Ls= 150nH CT4,WF3
Q
rr
Diode Reverse Recovery Charge — 350 455 nC di/dt = 400A/µs
