IXFN260N17T Datasheet IXFN260N17T | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 175°C 170 V

V

DGR

T

J

= 25°C to 175°C, R

GS

= 1MΩ 170 V

V

GSS

Continuous ±20 V

V

GSM

Transient ±30 V

I

D25

T

C

= 25°C 245 A

I

L(RMS)

External Lead Current Limit 200 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

700 A

I

A

T

C

= 25°C 100 A

E

AS

T

C

= 25°C3J

dV/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

, T

J

≤ 150°C 20 V/ns

P

D

T

C

= 25°C 1090 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

V

ISOL

50/60 Hz, RMS t = 1 minute 2500 V~

I

ISOL

≤ 1mA t = 1 second 3000 V~

M

d

Mounting Torque 1.5/13 Nm/lb.in.

Terminal Connection Torque 1.3/11.5 Nm/lb.in.

Weight 30 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 3mA 170 V

V

GS(th)

V

DS

= V

GS

, I

D

= 8mA 2.5 5.0 V

I

GSS

V

GS

= ±20V, V

DS

= 0V ±200 nA

I

DSS

V

DS

= V

DSS

, V

GS

= 0V 50 μA

T

J

= 150°C 5 mA

R

DS(on)

V

GS

= 10V, I

D

= 60A, Note 1 6.5 mΩ

GigaMOS

TM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFN260N17T

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

( Gate Return ) Terminal.

DS100137(03/09)

miniBLOC, SOT-227

E153432

G

D

S

G = Gate D = Drain

S = Source

V

DSS

= 170V

I

D25

= 245A

R

DS(on)

≤≤

≤

6.5m

ΩΩ

Ω

t

rr

≤≤

≤ 200ns

Features



International Standard Package



miniBLOC, with Aluminium Nitride

Isolation



Isolation voltage 2500 V~



High Current Handling Capability



Fast Intrinsic Diode



Avalanche Rated



Low R

DS(on)

Advantages



Easy to Mount



Space Savings



High Power Density

Applications



Synchronous Recification



DC-DC Converters



Battery Chargers



Switched-Mode and Resonant-Mode

Power Supplies



DC Choppers



AC Motor Drives



Uninterruptible Power Supplies



High Speed Power Switching

Applications

Advance Technical Information

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFN260N17T

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.

SOT-227B (IXFN) Outline

(M4 screws (4x) supplied)

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= 10V, I

D

= 60A, Note 1 105 170 S

C

iss

24 nF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 2870 pF

C

rss

450 pF

t

d(on)

54 ns

t

r

40 ns

t

d(off)

90 ns

t

f

40 ns

Q

g(on)

400 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 130A 108 nC

Q

gd

116 nC

R

thJC

0.138 °C/W

R

thCS

0.05 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V 260 A

I

SM

Repetitive, Pulse Width Limited by T

JM

1040 A

V

SD

I

F

= 60A, V

GS

= 0V, Note 1 1.3 V

t

rr

200 ns

Q

RM

0.56 μC

I

RM

9.00 A

Resistive Switching Times

V

GS

= 15V, V

DS

= 0.5 • V

DSS

, I

D

= 100A

R

G

= 1Ω (External)

I

F

= 130A, V

GS

= 0V

-di/dt = 100A/μs

V

R

= 75V

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

IXFN260N17T

Fig. 1. Output Characteristics

@ 25ºC

0

20

40

60

80

100

120

140

160

180

200

220

240

260

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

50

100

150

200

250

300

350

0.0 1.0 2.0 3.0 4.0 5.0 6.0

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6V

Fig. 3. Output Characteristics

@ 150ºC

0

20

40

60

80

100

120

140

160

180

200

220

240

260

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

6V

5V

Fig. 4. R

DS(on)

Normalized to I

D

= 130A Value

vs. Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 260A

I

D

= 130A

Fig. 5. R

DS(on)

Normalized to I

D

= 130A Value

vs. Drain Current

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

0 50 100 150 200 250 300 350

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

20

40

60

80

100

120

140

160

180

200

220

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

I

D

- Amperes

External Lead Current Limit

IXFN260N17T

IXFN260N17T

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