TPC8134,LQ(S Datasheet TPC8134,LQ(S | P1-P3

TPC8134

1

MOSFETs Silicon P-Channel MOS (U-MOS)

TPC8134

Start of commercial production

2010-11

1.

1. Applications

Applications

• Lithium-Ion Secondary Batteries

• Power Management Switches

2.

2. Features

Features

(1) Small footprint due to small and thin package

(2) Low drain-source on-resistance: R

DS(ON)

= 39 mΩ (typ.) (V

GS

= -10 V)

(3) Low leakage current: I

DSS

= -10 µA (max) (V

DS

= -40 V)

(4) Enhancement mode: V

th

= -0.8 to -2.0 V (V

DS

= -10 V, I

D

= -0.1 mA)

3.

3. Packaging and Internal Circuit

Packaging and Internal Circuit

SOP-8

1, 2, 3: Source

4: Gate

5, 6, 7, 8: Drain

4.

4. Absolute Maximum Ratings (Note) (T

Absolute Maximum Ratings (Note) (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Drain-source voltage

Gate-source voltage

Drain current (DC)

Drain current (pulsed)

Power dissipation

Single-pulse avalanche energy

Avalanche current

Channel temperature

Storage temperature

(t = 10 s)

(Note 1)

(Note 2)

(Note 3)

(Note 4)

Symbol

V

DSS

V

GSS

I

D

I

DP

P

D

P

D

E

AS

I

AR

T

ch

T

stg

Rating

-40

-25/+20

-5

-20

1.9

1.0

11

-5

150

-55 to 150

Unit

V

A

W

mJ

A



Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2014-01-07

Rev.2.0

TPC8134

2

5.

5. Thermal Characteristics

Thermal Characteristics

Characteristics

Channel-to-ambient thermal resistance

(t = 10 s)

(Note 2)

(Note 3)

Symbol

R

th(ch-a)

R

th(ch-a)

Max

65.7

125

Unit

/W

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1

Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2

Note 4: V

DD

= -24 V, T

ch

= 25 (initial), L = 0.5 mH, R

G

= 25 Ω, I

AR

= -5 A

Fig.

Fig. 5.1

5.1

5.1 Device Mounted on a Glass-Epoxy

Device Mounted on a Glass-Epoxy

Board (a)

Fig.

Fig. 5.2

5.2

5.2 Device Mounted on a Glass-Epoxy

Device Mounted on a Glass-Epoxy

Board (b)

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

2014-01-07

Rev.2.0

TPC8134

3

6.

6. Electrical Characteristics

Electrical Characteristics

6.1.

6.1. Static Characteristics (T

Static Characteristics (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Gate leakage current

Drain cut-off current

Drain-source breakdown voltage

Gate threshold voltage

Drain-source on-resistance

(Note 5)

Symbol

I

GSS

I

DSS

V

(BR)DSS

V

(BR)DSX

V

th

R

DS(ON)

Test Condition

V

GS

= ±20 V, V

DS

= 0 V

V

DS

= -40 V, V

GS

= 0 V

I

D

= -10 mA, V

GS

= 0 V

I

D

= -10 mA, V

GS

= 10 V

V

DS

= -10 V, I

D

= -0.1 mA

V

GS

= -4.5 V, I

D

= -2.5 A

V

GS

= -10 V, I

D

= -2.5 A

Min



-40

-30

-0.8



Typ.



49

39

Max

±0.1

-10



-2.0

66

52

Unit

µA

V

mΩ

Note 5: If a forward bias is applied between gate and source, this device enters V

(BR)DSX

mode. Note that the drain-

source breakdown voltage is lowered in this mode.

6.2.

6.2. Dynamic Characteristics (T

Dynamic Characteristics (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Input capacitance

Reverse transfer capacitance

Output capacitance

Switching time (rise time)

Switching time (turn-on time)

Switching time (fall time)

Switching time (turn-off time)

Symbol

C

iss

C

rss

C

oss

t

r

t

on

t

f

t

off

Test Condition

V

DS

= -10 V, V

GS

= 0 V, f = 1 MHz

See Figure 6.2.1.

Min



Typ.

890

100

130

8

15

30

125

Max



Unit

pF

ns

Fig.

Fig. 6.2.1

6.2.1

6.2.1 Switching Time Test Circuit

Switching Time Test Circuit

6.3.

6.3. Gate Charge Characteristics (T

Gate Charge Characteristics (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Total gate charge (gate-source plus

gate-drain)

Gate-source charge 1

Gate-drain charge

Symbol

Q

g

Q

gs1

Q

gd

Test Condition

V

DD

≈ -32 V, V

GS

= -10 V, I

D

= -5 A

Min



Typ.

20

2.2

5

Max



Unit

nC

6.4.

6.4. Source-Drain Characteristics (T

Source-Drain Characteristics (T

a

= 25

= 25



 unless otherwise specified)

unless otherwise specified)

Characteristics

Reverse drain current (pulsed)

Diode forward voltage

(Note 6)

Symbol

I

DRP

V

DSF

Test Condition



I

DR

= -5 A, V

GS

= 0 V

Min



Typ.



Max

-20

1.2

Unit

A

V

Note 6: Ensure that the channel temperature does not exceed 150.

2014-01-07

Rev.2.0

TPC8134,LQ(S

TPC8134,LQ(S

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