its DC current gain: O, Y, GR, BL
- Pb free and RoHS compliant
MECHANICAL DATA
- Case: TO-92 small outline plastic package
- High temperature soldering guaranteed: 260°C/10s 1. Emitter
- Weight: 195mg (approximately) 2. Collector
3. Base
- General purpose switching and AF amplifier application
SYMBOL UNIT
P
C
W
V
CBO
V
V
CEO
V
V
EBO
V
I
C
A
R
θJA
℃/W
T
J
, T
STG
°C
SYMBOL UNIT
Collector Cut-off Current
I
CBO
μA
Emitter Cut-off Current
I
EBO
μA
h
FE(1)
h
FE(2)
Collector-Emitter Saturation Voltage
V
CE(sat)
V
Base-Emitter Saturation Voltage
V
BE(sat)
V
Transition Frequency
f
T
MHz
Collector Output Capacitance
C
ob
pF
RANK O
RANGE
70-140
Document Number: DS_S1405004
Version: A14
0.1
700
0.25
300-700
3.5
250
MIN
-
Collector-Emitter Voltage
Emitter-Base Voltage
Junction and Storage Temperature Range
DC Current Gain
V
CE
= 6V, I
C
= 2mA
V
CE
= 6V, I
C
= 150mA
60
50
MAX
0.1
5
FEATURES
Collector Power Dissipation 0.5
PARAMETER
- The transistor is subdivided into four groups according to
Taiwan Semiconductor
VALUE
Small Signal Product
TO-92 NPN Bipolar Transistor
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25
unless otherwise noted)
TO-92
80
0.15
-55 to + 150
1
25
-
V
EB
= 5V, I
C
= 0
V
CB
= 60V, I
E
= 0
70
120-240 200-400
CLASSIFIACTION OF h
FE
V
CB
= 10V, I
E
=0, f=1MHz
V
CE
= 10V, I
C
=1mA
I
C
= 100mA, I
B
=10mA
I
C
= 100mA, I
B
=10mA
APPLICATION
Thermal Resistance From Junction to Ambient
Collector-Base Voltage
Collector Current
PARAMETER
