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SQJ403BEEP-T1_GE3

P1-P3P4-P6P7-P7
SQJ403BEEP
www.vishay.com
Vishay Siliconix
S16-1461-Rev. A, 19-Jul-16
1
Document Number: 67407
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• ESD protection: 3000 V
• AEC-Q101 qualified
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257
). The end of the lead terminal of PowerPAK SO-8L is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
V
DS
(V) -30
R
DS(on)
() at V
GS
= -10 V 0.0085
R
DS(on)
() at V
GS
= -4.5 V 0.0200
I
D
(A) -30
a
Configuration Single
Package PowerPAK SO-8L
PowerPAK
®
SO-8L Single
2
S
3
S
4
G
1
S
D
Bottom View
1
6.15 mm
5.13 mm
Top View
P-Channel
D
S
G
5400 Ω
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
-30
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
a
T
C
= 25 °C
I
D
-30
A
T
C
= 125 °C -30
Continuous Source Current (Diode conduction)
a
I
S
-30
Pulsed Drain Current
b
I
DM
-84
Single Pulse Avalanche Current
L = 10 mH
I
AS
-6.5
Single Pulse Avalanche Energy E
AS
211 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
68
W
T
C
= 125 °C 22
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175
°C
Soldering Recommendations (Peak temperature)
d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB mount
c
R
thJA
68
°C/W
Junction-to-Case (Drain) R
thJC
2.2
SQJ403BEEP
www.vishay.com
Vishay Siliconix
S16-1461-Rev. A, 19-Jul-16
2
Document Number: 67407
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -30 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -1.5 -2.0 -2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 12 V - - ± 2 μA
V
DS
= 0 V, V
GS
= ± 20 V - - ± 1 mA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= -30 V - - -1
μA V
GS
= 0 V V
DS
= -30 V, T
J
= 125 °C - - -50
V
GS
= 0 V V
DS
= -30 V, T
J
= 175 °C - - -250
On-State Drain Current
a
I
D(on)
V
GS
= -10 V V
DS
-5 V -30 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -10 V I
D
= -10 A - 0.0070 0.0085
V
GS
= -10 V I
D
= -10 A, T
J
= 125 °C - - 0.0130
V
GS
= -10 V I
D
= -10 A, T
J
= 175 °C - - 0.0150
V
GS
= -4.5 V I
D
= -7 A - 0.0120 0.0200
Forward Transconductance
b
g
fs
V
DS
= -10 V, I
D
= -10 A - 32 - S
Dynamic
b
Output Capacitance C
oss
V
GS
= 0 V V
DS
= -15 V, f = 1 MHz - 712 890 pF
Total Gate Charge
c
Q
g
V
GS
= -10 V V
DS
= -15 V, I
D
= -10 A
-75164
nC Gate-Source Charge
c
Q
gs
-9.5-
Gate-Drain Charge
c
Q
gd
-19-
Gate Resistance R
g
f = 1 MHz 2 4.3 7.5 k
Turn-On Delay Time
c
t
d(on)
V
DD
= -15 V, R
L
= 1.5
I
D
-10 A, V
GEN
= -10 V, R
g
= 1
-3857
ns
Rise Time
c
t
r
-82123
Turn-Off Delay Time
c
t
d(off)
- 134 201
Fall Time
c
t
f
- 178 214
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
---84A
Forward Voltage V
SD
I
F
= -3 A, V
GS
= 0 V - -0.75 -1.2 V
SQJ403BEEP
www.vishay.com
Vishay Siliconix
S16-1461-Rev. A, 19-Jul-16
3
Document Number: 67407
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Current vs. Gate-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current
Gate Current vs. Gate-Source Voltage
Transfer Characteristics
Capacitance
0.000
0.001
0.002
0.003
0.004
0.005
0 7 14 21 28 35
I
GSS
- Gate Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
0
20
40
60
80
0 2 4 6 8 10
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3 V
0
0.005
0.010
0.015
0.020
0.025
0 15 30 45 60
R
DS(on)
-On-Resistance (Ω)
I
D
-Drain Current (A)
V= 10 V
GS
V
GS
= 4.5 V
0 6 12 18 24 30
I
GSS
- Gate Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 150 °C
10
-10
10
-9
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
0
10
20
30
40
50
0 1 2 3 4 5
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= -55 °C
T
C
= 125 °C
T
C
= 25 °C
0
600
1200
1800
2400
3000
0 5 10 15 20 25 30
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
oss
P1-P3P4-P6P7-P7

SQJ403BEEP-T1_GE3

Mfr. #:
Buy SQJ403BEEP-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P Ch -30Vds 20Vgs AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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