MBR40H100WTG

MBR40H100WTG
http://onsemi.com
4
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
0
V
R
, REVERSE VOLTAGE (V)
100
10
40 80
T
J
= 25°C
1
00
20 60
10000
1000
P
F(AV)
, AVERAGE POWER DISSIPATION (W)
120
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
30
4.0
0
4.0 8.0
Square Wave
Figure 7. Forward Power Dissipation
16
8.0
12
20
dc
2016
24
28
3028
Figure 8. Capacitance
24
T
J
= 175°C
R(t), TRANSIENT THERMAL RESISTANCE
Figure 9. Thermal Response Junction−to−Case
100
0
0.10.00001
t
1
, TIME (sec)
10
0.001
0.0001 0.001 0.01 1 10 1000.000001
0.1
1
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
SINGLE PULSE
0.2
0.1
0.05
0.01
0.01
MBR40H100WTG
http://onsemi.com
5
MERCURY
SWITCH
V
D
I
D
DUT
10 mH COIL
+V
DD
I
L
S
1
BV
DUT
I
L
I
D
V
DD
t
0
t
1
t
2
t
Figure 10. Test Circuit
Figure 11. Current−Voltage Waveforms
The unclamped inductive switching circuit shown in
Figure 10 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S
1
is closed at t
0
the current in the inductor I
L
ramps
up linearly; and energy is stored in the coil. At t
1
the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BV
DUT
and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t
2
.
By solving the loop equation at the point in time when S
1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the V
DD
power supply while the diode is in
breakdown (from t
1
to t
2
) minus any losses due to finite
component resistances. Assuming the component resistive
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the V
DD
voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S
1
was closed,
Equation (2).
W
AVAL
[
1
2
LI
2
LPK
ǒ
BV
DUT
BV
DUT
V
DD
Ǔ
W
AVAL
[
1
2
LI
2
LPK
EQUATION (1):
EQUATION (2):
MBR40H100WTG
http://onsemi.com
6
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE A
E2
L1
D
L
b4
b2
b
E
0.25
M
BA
M
c
A1
A
123
B
e
2X
3X
0.635
M
BA
M
A
S
P
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
L1.
6. P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
BY L1.
DIM MIN MAX
MILLIMETERS
D 20.30 21.40
E 15.50 16.25
A 4.70 5.30
b 1.00 1.40
b2 1.65 2.35
e 5.45 BSC
A1 2.20 2.60
c 0.40 0.80
L 19.80 20.80
Q 5.40 6.20
E2 4.32 5.49
L1 3.50 4.50
P 3.55 3.65
S 6.15 BSC
b4 2.60 3.40
NOTE 6
4
NOTE 7
Q
NOTE 4
NOTE 3
NOTE 5
E2/2
NOTE 4
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
MBR40H100WT/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.

MBR40H100WTG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 40A 100V H-SER SCHOTTKY
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet