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HGT1S3N60A4DS9A

P1-P3P4-P6P7-P9
©2001 Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D Rev. B
HGT1S3N60A4DS, HGTP3N60A4D
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1S3N60A4DS and the HGTP3N60A4D are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25
o
C and 150
o
C. The IGBT used is the development type
TA49327. The diode used in anti-parallel is the development
type TA49369.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential.
This device has been
optimized for high frequency switch mode power
supplies
.
Formerly Developmental Type TA49329.
Symbol
Features
• >100kHz Operation At 390V, 3A
• 200kHz Operation At 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . 70ns at T
J
= 125
o
C
• Low Conduction Loss
•
Temperature Compensating
SABER™ Model
www.Fairchildsemi.com
Packaging
JEDEC TO-263AB
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
HGT1S3N60A4DS TO-263AB 3N60A4D
HGTP3N60A4D TO-220AB 3N60A4D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A.
C
E
G
COLLECTOR
(FLANGE)
E
G
C
G
E
COLLECTOR
(FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet December 2001
©2001 Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGT1S3N60A4DS
HGTP3N60A4D UNITS
Collector to Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
600 V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C25
17 A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C110
8A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
40 A
Gate to Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
±
20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
±
30 V
Switching Safe Operating Area at T
J
= 150
o
C (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 15A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
70 W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.58 W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
CES
I
C
= 250
µ
A, V
GE
= 0V 600 - - V
Collector to Emitter Leakage Current I
CES
V
CE
= 600V T
J
= 25
o
C - - 250
µ
A
T
J
= 125
o
C - - 3.0 mA
Collector to Emitter Saturation Voltage V
CE(SAT)
I
C
= 3A,
V
GE
= 15V
T
J
= 25
o
C - 2.0 2.7 V
T
J
= 125
o
C - 1.6 2.2 V
Gate to Emitter Threshold Voltage V
GE(TH)
I
C
= 250
µ
A, V
CE
= 600V 4.5 6.1 7.0 V
Gate to Emitter Leakage Current I
GES
V
GE
=
±
20V - -
±
250 nA
Switching SOA SSOA T
J
= 150
o
C, R
G
= 50
Ω
, V
GE
= 15V,
L = 200
µ
H, V
CE
= 600V
15 - - A
Gate to Emitter Plateau Voltage V
GEP
I
C
= 3A, V
CE
= 300V - 8.8 - V
On-State Gate Charge Q
g(ON)
I
C
= 3A,
V
CE
= 300V
V
GE
= 15V - 21 25 nC
V
GE
= 20V - 26 32 nC
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 3A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 50
Ω,
L = 1mH,
Test Circuit (Figure 24)
-6 - ns
Current Rise Time t
rI
-11 - ns
Current Turn-Off Delay Time t
d(OFF)I
-73 - ns
Current Fall Time t
fI
-47 - ns
Turn-On Energy (Note 2) E
ON1
-37 -
µ
J
Turn-On Energy (Note 2) E
ON2
-5570
µ
J
Turn-Off Energy (Note 3) E
OFF
-2535
µ
J
HGT1S3N60A4DS, HGTP3N60A4D
©2001 Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D Rev. B
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at T
J
= 125
o
C,
I
CE
= 3A,
V
CE
= 390V, V
GE
= 15V,
R
G
= 50
Ω,
L = 1mH,
Test Circuit (Figure 24)
- 5.5 8 ns
Current Rise Time t
rI
-1215ns
Current Turn-Off Delay Time t
d(OFF)I
- 110 165 ns
Current Fall Time t
fI
- 70 100 ns
Turn-On Energy (Note 2) E
ON1
-37 -
µ
J
Turn-On Energy (Note 2) E
ON2
- 90 100
µ
J
Turn-Off Energy (Note 3) E
OFF
-5080
µ
J
Diode Forward Voltage V
EC
I
EC
= 3A - 2.25 - V
Diode Reverse Recovery Time t
rr
I
EC
= 3A, dI
EC
/dt = 200A/
µ
s - 29 - ns
I
EC
= 1A, dI
EC
/dt = 200A/
µ
s - 19 - ns
Thermal Resistance Junction To Case R
θ
JC
IGBT - - 1.8
o
C/W
Diode - - 3.5
o
C/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Specifications T
J
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECTOR CURRENT (A)
50
4
0
16
8
12
25 75 100 125 150
20
V
GE
= 15V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
12
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
4
300 400200100 500 600
0
16
20
8
T
J
= 150
o
C, R
G
= 50Ω, V
GE
= 15V, L = 200µH
HGT1S3N60A4DS, HGTP3N60A4D
P1-P3P4-P6P7-P9

HGT1S3N60A4DS9A

Mfr. #:
Buy HGT1S3N60A4DS9A
Manufacturer:
ON Semiconductor / Fairchild
Description:
Motor / Motion / Ignition Controllers & Drivers 600V N-Channel IGBT SMPS Series
Lifecycle:
New from this manufacturer.
Delivery:
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