HMC594

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - CHIP
4
HMC594
v01.0312
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
Outline Drawing
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) +7 Vdc
RF Input Power (RFIN)(Vdd = +6.0 Vdc) +15 dBm
Channel Temperature 175 °C
Continuous Pdiss (T= 85 °C)
(derate 11.7 mW/°C above 85 °C)
0.76 W
Thermal Resistance
(channel to die bottom)
85 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Vdd (Vdc) Idd (mA)
+5.5 97
+6.0 100
+6.5 103
Typical Supply Current vs. Vdd
Note: Amplier will operate over full voltage ranges shown
above.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information
[1]
Standard Alternate
GP-1 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - CHIP
5
HMC594
v01.0312
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
Pad Descriptions
Pad Number Function Description Interface Schematic
1, 3, 4, 6
Die Bottom
GND
Die bottom must be connected to RF/DC ground. Grounding of pads
1, 3, and 6 is optional. RF performance may be improved through
grounding of these pads. No connection is required to pad 4.
2 RFIN
This pad is AC coupled and matched to
50 Ohms from 2 - 4 GHz.
5 Vdd
Power Supply Voltage for the amplier. External bypass capacitors
of 100 pF and 0.1 µF are required.
7 RFOUT
This pad is AC coupled and matched to
50 Ohms from 2 - 4 GHz.
8 Vgg
Gate supply voltage for the amplier. External bypass capacitors of
100 pF and 0.1 µF are required.
Assembly Diagram
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LOW NOISE - CHIP
6
HMC594
v01.0312
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, 2 - 4 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be
raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick
die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to
minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils).
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD
strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or
with electrically conductive epoxy. The mounting surface should be clean and at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work
surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip
temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more
than 3 seconds of scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on
the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D

HMC594

Mfr. #:
Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier lo Noise amp Chip, 2 - 4 GHz
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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