V
RRM
= 50 V - 1000 V
I
F
=6 A
Features
• Types up to 1000 V V
RRM
• Ideal for printed circuit board KBL Package
• Hi
h sur
e current capabilit
• Reliable low cost construction utilizing molded plastic technique
Mechanical Data
Case: Molded plastic
Weight: 0.167 oz, 5 g
Mounting position: Any
Polarity: Marked on body
Parameter Symbol KBL601G KBL602G Unit
Terminals: Plated leads, solderable per MIL-STD-202F,
Method 208
KBL601G thru KBL604G
KBL604GKBL603G
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Silicon Bridge
Rectifier
Conditions
Repetitive peak reverse voltage
V
RRM
50 100 V
RMS reverse voltage
V
RMS
35 70 V
DC blocking voltage
V
DC
50 100 V
Continuous forward current
I
F
66 A
Operating temperature
T
j
-55 to 150 -55 to 150 °C
Storage temperature
T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol KBL601G KBL602G Unit
Diode forward voltage 1.1 1.1
55
100 100
100
A180
Reverse current
I
R
V
F
180
μA
V
R
= 50 V, T
j
= 25 °C
I
F
= 6 A, T
j
= 25 °C
T
C
≤ 50 °C
Conditions
200
140
180 180
-55 to 150
66
-55 to 150
KBL604G
55
KBL603G
V
R
= 50 V, T
j
= 125 °C
1.1 1.1
100
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-55 to 150 -55 to 150
T
C
= 25 °C, t
p
= 8.3 ms
400
280
400200
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
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