Philips Semiconductors
BSH111
N-channel enhancement mode field-effect transistor
Product data Rev. 02 — 26 April 2002 2 of 13
9397 750 09629
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5. Quick reference data
6. Limiting values
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
DS
drain-source voltage (DC) 25 °C ≤ T
j
≤ 150 °C - 55 V
I
D
drain current (DC) T
sp
=25°C; V
GS
= 4.5 V - 335 mA
P
tot
total power dissipation T
sp
=25°C - 0.83 W
T
j
junction temperature - 150 °C
R
DSon
drain-source on-state resistance V
GS
= 4.5 V; I
D
= 500 mA 2.3 4.0 Ω
V
GS
= 2.5 V; I
D
= 75 mA 2.4 5.0 Ω
V
GS
= 1.8 V; I
D
= 75 mA 3.1 8.0 Ω
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) 25 °C ≤ T
j
≤ 150 °C - 55 V
V
DGR
drain-gate voltage (DC) 25 °C ≤ T
j
≤ 150 °C; R
GS
=20kΩ -55V
V
GS
gate-source voltage - ±10 V
I
D
drain current (DC) T
sp
=25°C; V
GS
= 4.5 V;
Figure 2 and 3
- 335 mA
T
sp
= 100 °C; V
GS
= 4.5 V; Figure 2 - 212 mA
I
DM
peak drain current T
sp
=25°C; pulsed; t
p
≤ 10 µs;
Figure 3
- 1.3 A
P
tot
total power dissipation T
sp
=25°C; Figure 1 - 0.83 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature −65 +150 °C
Source-drain diode
I
S
source (diode forward) current (DC) T
sp
=25°C - 335 mA
I
SM
peak source (diode forward) current T
sp
=25°C; pulsed; t
p
≤ 10 µs - 1.3 A
