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SI3407DV-T1-GE3

P1-P3P4-P6P7-P9P10-P11
Vishay Siliconix
Si3407DV
www.vishay.com
4
Document Number: 69987
S09-2110-Rev. B, 12-Oct-09
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.1
1
10
100
0.0 0.3 0.6 0.9 1.2
T
J
= 150 °C
T
J
= 25 °C
0.5
0.7
0.9
1.1
1.3
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.01
0.02
0.03
0.04
036912
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
I
D
=7.5A
0
10
20
30
40
0.01 0.1 1 10 100 1000
Time(s)
Power (W)
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
- Drain Current (A)I
D
0.1
T
A
= 25 °C
Single Pulse
10 ms
100 ms
1s,10s
DC
Limited byR
DS(on)
*
BVDSS
Limited
1ms
100 µs
Vishay Siliconix
Si3407DV
Document Number: 69987
S09-2110-Rev. B, 12-Oct-09
www.vishay.com
5
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
3
6
9
12
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Package Limited
Power Derating, Junction-to-Foot
0
1
2
3
4
5
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power Derating, Junction-to-Ambient
0.0
0.3
0.6
0.9
1.2
1.5
0 25 50 75 100 125 150
T
A
-Ambient Temperature (°C)
Power (W)
Vishay Siliconix
Si3407DV
www.vishay.com
6
Document Number: 69987
S09-2110-Rev. B, 12-Oct-09
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69987
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1
10
100010
-1
10
-4
100
0.2
0.1
0.05
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
0.02
Normalized Thermal Transient Impedance, Junction-to-Foot
P1-P3P4-P6P7-P9P10-P11

SI3407DV-T1-GE3

Mfr. #:
Buy SI3407DV-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 12V Vgs TSOP-6
Lifecycle:
New from this manufacturer.
Delivery:
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